BCR08AS Powerex, Inc., BCR08AS Datasheet - Page 4

• Manufacturer Part Number: BCR08AS
• Description: Low Power Use Non-insulated Type, Planar Passivation Type
• Manufacturer: Powerex, Inc.

RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
10
160
140
120
100
10
10
10
10
10
10
10
80
60
40
20
–1
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
0
–60
–40
5
4
3
2
2
1
0
10
0
TYPICAL EXAMPLE
TYPICAL EXAMPLE
T
T
T
–40
JUNCTION TEMPERATURE ( C)
JUNCTION TEMPERATURE ( C)
+
2
–
2
–
2
REPETITIVE PEAK OFF-STATE
2 3
DISTRIBUTION
, G
, G
, G
III QUADRANT
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
–20 0 20
CURRENT VS. JUNCTION
+
LACHING CURRENT VS.
–
+
0
OFF-STATE VOLTAGE
5 7 10
TYPICAL
EXAMPLE
RATE OF RISE OF
TEMPERATURE
1
40
2 3 5 7 10
T
TYPICAL EXAMPLE
40
2
+
, G
60 80 100 120
80
–
I QUADRANT
T
j
2
= 125 C
2 3 5 7 10
120
140
160
3
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
10
160
140
120
100
10
10
10
10
10
80
60
40
20
–1
0
7
5
3
2
7
5
3
2
10
7
5
3
2
7
5
3
2
–60
–60
1
0
3
2
1
MITSUBISHI SEMICONDUCTOR TRIAC
COMMUTATION CHARACTERISTICS
–1
COMMUTATING CURRENT (A/ms)
MINIMUM
CHARAC-
TERISTICS
VALUE
–40
–40
JUNCTION TEMPERATURE ( C)
JUNCTION TEMPERATURE ( C)
RATE OF DECAY OF ON-STATE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE
2 3
–20 0 20
–20 0 20
HOLDING CURRENT VS.
5 7 10
I QUADRANT
TYPICAL EXAMPLE
TYPICAL EXAMPLE
40
40
0
60 80 100 120
60 80
III QUADRANT
2 3
TYPICAL
EXAMPLE
T
I
V
f = 3Hz
LOW POWER USE
T
j
D
= 500 s
100120
= 125 C
= 1A
= 200V
BCR08AS
5 7 10
140
140
1
Mar. 2002