BCR3AS-12 Renesas, BCR3AS-12 Datasheet

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BCR3AS-12

Manufacturer Part Number
BCR3AS-12
Description
Manufacturer
Renesas
Datasheet

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Part Number:
BCR3AS-12
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

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BCR3AS-12 Summary of contents

Page 1

... Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself ...

Page 2

... CLASS 0.9 MAX 5 Voltage class 12 600 720 Conditions Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value BCR3AS LOW POWER USE Dimensions in mm 6.5 0.5 0.1 5.0 0.2 4 1.0 0.5 0.2 2.3 2.3 0.8 Measurement point of ...

Page 3

... Junction to case 4 T =125 C j item1) GT Commutating voltage and current waveforms RATED SURGE ON-STATE CURRENT BCR3AS LOW POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.7 — — 1.5 — — 1.5 — — 1.5 5 — — ...

Page 4

... MITSUBISHI SEMICONDUCTOR TRIAC BCR3AS LOW POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE I RGT III I I FGT I, RGT I –40 – 100 120 140 JUNCTION TEMPERATURE ( C) MAXIMUM TRANSIENT THERMAL ...

Page 5

... RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) BCR3AS LOW POWER USE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE –40 – 100 120 140 JUNCTION TEMPERATURE ( C) LACHING CURRENT VS. JUNCTION TEMPERATURE + – ...

Page 6

... III QUADRANT GATE CURRENT PULSE WIDTH ( BCR3AS LOW POWER USE GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH TYPICAL EXAMPLE I RGT III I RGT I I FGT ...

Page 7

... CLASS 0.9 MAX 5 Voltage class 12 600 720 Conditions Commercial frequency, sine full wave 360 conduction, T 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value BCR3AS LOW POWER USE Dimensions in mm 6.5 0.5 0.1 5.0 0.2 4 1.0 0.5 0.2 2.3 2.3 0.8 Measurement point of ...

Page 8

... Junction to case 4 T =125 C/150 C j item1) GT Commutating voltage and current waveforms 150 2.5 3.0 3.5 4.0 10 MITSUBISHI SEMICONDUCTOR TRIAC BCR3AS LOW POWER USE Limits Min. Typ. Max. — — 2.0 — — 1.7 — — 1.5 — — 1.5 — — 1.5 5 — — — ...

Page 9

... MITSUBISHI SEMICONDUCTOR TRIAC BCR3AS LOW POWER USE GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE I RGT III I I FGT I, RGT I –40 – 100 120 140 160 JUNCTION TEMPERATURE ( C) ...

Page 10

... RATE OF RISE OF OFF-STATE VOLTAGE (V/ s) BCR3AS LOW POWER USE REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE –40 – 100 120 140 160 JUNCTION TEMPERATURE ( C) LACHING CURRENT VS. ...

Page 11

... V = 200V 3Hz TEST PROCEDURE 2 BCR3AS LOW POWER USE COMMUTATION CHARACTERISTICS (T = 125 C) j SUPPLY TYPICAL TIME VOLTAGE EXAMPLE (di/dt)c MAIN CURRENT T = 125 C TIME j MAIN TIME T VOLTAGE V D (dv/dt)c = 500 s ...

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