BCR39 Infineon Technologies Corporation, BCR39 Datasheet

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BCR39

Manufacturer Part Number
BCR39
Description
Npn/pnp Silicon Digital Transistor Array
Manufacturer
Infineon Technologies Corporation
Datasheet



Tape loading orientation
Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
Thermal Resistance
NPN/PNP Silicon Digital Transistor Array
BCR39PN
Junction - soldering point
1 For calculation of R
Switching circuit, inverter, interface circuit,
Two (galvanic) internal isolated NPN/PNP
Built in bias resistor (R
driver circuit
Transistors in one package
Direction of Unreeling
Top View
6
1 2 3
W1s
5
4
thJA
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
please refer to Application Note Thermal Resistance
Marking
W3s
1
S
= 22k
1)
= 115 °C

EHA07193
)
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
TR1
C1
E1
6
1
Pin Configuration
1
R
1
Symbol
V
V
V
V
I
P
T
T
R
B2
B1
C
5
2
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
R
1
E2
C2
EHA07290
4
3
TR2
6
5
-65 ... 150
Value

100
250
150
50
50
30
140
5
4
Package
Nov-29-2001
BCR39PN
1
VPS05604
Unit
V
mA
mW
°C
2
K/W
3

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BCR39 Summary of contents

Page 1

... R 1 TR1 1 2 EHA07193 E1 B1 Pin Configuration 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol V CEO V CBO V EBO V i(on 115 °C P tot stg R thJS 1 BCR39PN VPS05604 E2 4 TR2 3 C2 EHA07290 Package Value 100 250 150 -65 ... 150  140 Nov-29-2001 3 2 Unit ° ...

Page 2

... C CE Collector-base capacitance MHz CB 1) Pulse test: t < 300 < =25°C, unless otherwise specified A Symbol V (BR)CEO V (BR)CBO V (BR)EBO I CBO CEsat V i(off) V i(on BCR39PN Values Unit min. typ. max 100 nA 120 - 630 - - - 0.3 V 0.4 - 0.8 0.5 - 1.1 15 ...

Page 3

... CEsat Input off voltage (common emitter configuration i(on) 3 BCR39PN = 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 i(off 0.5 1 1.5 2 Nov-29-2001 1 V CEsat i(off) ...

Page 4

... CEsat Input off voltage (common emitter configuration i(on) 4 BCR39PN = 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 i(off 0.5 1 1.5 2 Nov-29-2001 1 V CEsat i(off) ...

Page 5

... S 120 °C 100 150 T S Permissible Pulse Load = thJS p P totmax 10 10 0.5 0.2 0.1 0.05 10 0.02 0.01 0.005 BCR39PN / totDC 0.005 0.01 0.02 0.05 0.1 0.2 0 Nov-29-2001 ...

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