BCR503E6327 Infineon Technologies Corporation, BCR503E6327 Datasheet
BCR503E6327
Manufacturer Part Number
BCR503E6327
Description
NPN Silicon Digital Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BCR503E6327.pdf
(4 pages)
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Quantity
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Company:
Part Number:
BCR503E6327
Manufacturer:
MAX
Quantity:
4 222
Thermal Resistance
NPN Silicon Digital Transistor
Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
Junction - soldering point
BCR503
1 For calculation of R
Switching circuit, inverter, interface circuit,
Built in bias resistor (R
driver circuit
thJA
please refer to Application Note Thermal Resistance
Marking
XAs
1
=2.2k
1)
S
= 79 °C
, R
2
=2.2k
1 = B
B
1
)
R
1
Pin Configuration
R
2
1
C
3
2 = E
Symbol
V
V
V
V
I
P
T
T
R
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
EHA07184
2
E
3 = C
-65 ... 150
3
Value
500
330
150
50
50
10
12
215
Package
SOT23
1
Jun-29-2001
BCR503
VPS05161
Unit
V
mA
mW
°C
K/W
2
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BCR503E6327 Summary of contents
Page 1
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R =2. Type Marking BCR503 XAs Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage I = 100 µ Collector-base breakdown voltage µ Collector cutoff current ...
Page 3
DC Current Gain (common emitter configuration Input on Voltage i(on) ...
Page 4
Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0. 0.01 0.005 D = ...