BCR521E6327 Infineon Technologies Corporation, BCR521E6327 Datasheet
BCR521E6327
Manufacturer Part Number
BCR521E6327
Description
NPN Silicon Digital Transistor
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BCR521E6327.pdf
(4 pages)
Thermal Resistance
NPN Silicon Digital Transistor
Type
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Input on Voltage
DC collector current
Total power dissipation, T
Junction temperature
Storage temperature
Junction - soldering point
BCR521
1 For calculation of R
Switching circuit, inverter, interface circuit,
Built in bias resistor (R
driver circuit
thJA
please refer to Application Note Thermal Resistance
Marking
XVs
1
=1k
1)
S
= 79 °C
, R
2
=1k
1 = B
)
B
1
R
1
Pin Configuration
R
2
1
C
3
2 = E
Symbol
V
V
V
V
I
P
T
T
R
C
j
stg
CEO
CBO
EBO
i(on)
tot
thJS
EHA07184
2
E
3 = C
-65 ... 150
3
Value
500
330
150
50
50
10
215
5
Package
SOT23
Dec-13-2001
1
BCR521
VPS05161
Unit
V
mA
mW
°C
K/W
2
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BCR521E6327 Summary of contents
Page 1
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = Type Marking BCR521 XVs Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total ...
Page 2
Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage = 100 µ Collector-base breakdown voltage = 10 µ Collector cutoff current = ...
Page 3
DC Current Gain (common emitter configuration Input on Voltage i(on) ...
Page 4
Total power dissipation P 400 mW 300 250 200 150 100 Permissible Pulse Load K 0.5 0.2 0.1 0.05 0. 0.01 0.005 D = ...