BCR8PM-14L Renesas, BCR8PM-14L Datasheet - Page 6

• Manufacturer Part Number: BCR8PM-14L
• Manufacturer: Renesas

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
TEST PROCEDURE 1
TEST PROCEDURE 3
6V
6V
6
6
160
140
120
100
10
10
10
80
60
40
20
0
3
2
7
5
3
2
7
5
3
2
7
5
–60
2
1
0
10
COMMUTATION CHARACTERISTICS
TYPICAL
EXAMPLE
T
I
V
f = 3Hz
0
MINIMUM
CHARAC-
TERISTICS
VALUE
T
COMMUTATING CURRENT (A/ms)
–40
j
D
= 500 s
JUNCTION TEMPERATURE ( C)
RATE OF DECAY OF ON-STATE
V
V
= 125 C
= 4A
2 3
= 200V
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
–20 0 20
A
A
5 7 10
R
R
1
G
G
III QUADRANT
2 3 5 7 10
TEST PROCEDURE 2
TYPICAL EXAMPLE
I QUADRANT
40
CURRENT WAVEFORM
VOLTAGE WAVEFORM
6V
6
(dv/dt)
I
60 80
T
2
C
V
100120
2 3 5 7 10
(di/dt)
A
V
D
t
t
C
140
R
G
3
INSULATED TYPE, PLANAR PASSIVATION TYPE
RATE OF RISE OF OFF-STATE VOLTAGE (V/ s)
160
140
120
100
10
10
10
80
60
40
20
0
7
5
4
3
2
7
5
4
3
2
10
3
2
1
10
MITSUBISHI SEMICONDUCTOR TRIAC
GATE CURRENT PULSE WIDTH ( s)
1
0
GATE CURRENT PULSE WIDTH
2 3
GATE TRIGGER CURRENT VS.
BREAKOVER VOLTAGE VS.
2 3
I
OFF-STATE VOLTAGE
FGT I
5 7 10
RATE OF RISE OF
4
I
5 7 10
RGT I
2
2 3 5 7 10
TYPICAL EXAMPLE
TYPICAL EXAMPLE
I
RGT III
I QUADRANT
1
MEDIUM POWER USE
2 3
III QUADRANT
BCR8PM-14
3
T
j
2 3 5 7 10
= 125 C
4
5 7 10
2
4
Mar. 2002