BSM150GB170DN2E3166 Siemens (acquired by Infineon Technologies Corporation), BSM150GB170DN2E3166 Datasheet - Page 6

• Manufacturer Part Number: BSM150GB170DN2E3166
• Description: Igbt Power Module ( Half-bridge Including Fast Free-wheeling Diodes Enlarged Diode Area )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

I
Cpuls
Typ. gate charge
V
parameter: I
Reverse biased safe operating area
I
Semiconductor Group
parameter: V
Cpuls
V
GE
GE
/ I
C
= ( Q
= f(V
2.5
1.5
1.0
0.5
0.0
20
16
14
12
10
V
8
6
4
2
0
0.0
0
Gate
CE
250
C puls
)
GE
)
0.4
,
= 15 V
500
T
= 150 A
j
= 150°C
0.8
750
800 V
1000 1250 1500
1.2
1.6
1200 V
Q
µC
V
V
Gate
CE
2000
2.2
6
I
Typ. capacitances
C = f ( V
Short circuit safe operating area
I
Csc
parameter: V
Csc
parameter: V
C
/ I
C
= f(V
10
10
10
10
nF
12
-1
8
6
4
2
0
2
1
0
0
CE
0
CE
)
) , T
250
5
GE
GE
BSM150GB170DN2 E3166
j
= ± 15 V, t
= 150°C
500
= 0, f = 1 MHz
10
750
15
1000 1250 1500
SC
20
25
10 µs, L < 25 nH
30
Aug-01-1996
V
V
V
V
CE
CE
Ciss
Coss
Crss
2000
40