MCP1259 Microchip Technology, MCP1259 Datasheet - Page 4
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MCP1259
Manufacturer Part Number
MCP1259
Description
Low-Ripple Charge Pump
Manufacturer
Microchip Technology
Datasheet
1.MCP1259.pdf
(24 pages)
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MCP1256/7/8/9
DC CHARACTERISTICS (CONTINUED)
DS21989A-page 4
Electrical Specifications: Unless otherwise indicated, all limits apply for V
C
MCP1256 and MCP1257 Devices
SLEEP Mode Input - SLEEP
SLEEP Input Voltage Low
SLEEP Input Voltage High
SLEEP Input Leakage
Current
SLEEP Quiescent Current
MCP1256 and MCP1258 Devices
Power-Good Output - PGOOD
PGOOD Threshold
PGOOD Hysteresis
PGOOD Output Low
Voltage
PGOOD Input Leakage
Current
MCP1257 and MCP1259
Low-Battery Output - LBO
LBO Threshold
LBO Hysteresis
LBO Output Low Voltage
LBO Input Leakage Current
MCP1258 and MCP1259
BYPASS Mode Input - BYPASS
BYPASS Input Voltage Low
BYPASS Input Voltage
High
BYPASS Input Leakage
Current
BYPASS Quiescent
Current
BYPASS Input-to-Output
Impedance
1
= C
2
Parameters
= 1 μF, I
OUT
= 10 mA, T
V
V
I
I
V
V
J
I
LK(BYPASS)
LK(PGOOD)
R
LK(SLEEP)
IL(BYPASS)
IH(BYPASS)
I
IH(SLEEP)
= -40°C to +125°C. Typical values are at T
IL(SLEEP)
LK(LBO)
BYPASS
V
V
Sym
V
V
V
V
HYS
HYS
I
I
Q
TH
OL
TH
OL
Q
Min
1.4
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.001
0.001
0.02
1.95
0.02
0.25
Typ
110
240
1.5
10
93
25
25
—
—
—
—
IN
J
= +25°C.
= 1.8V to 3.6V, SHDN = V
Max
100
100
0.4
0.1
0.4
0.1
—
20
—
—
—
—
—
—
1
1
2
Unit
mV
mV
mV
mV
μA
μA
μA
μA
μA
μA
%
s
V
V
V
V
V
© 2006 Microchip Technology Inc.
V
Percent of V
V
I
V
V
V
I
V
V
T
V
SINK
SINK
SLEEP
OUT
PGOOD
IN
IN
LBO
BYPASS
J
IN
IN
= +25°C
Falling
Rising
= 2.4V
, C
= 0.5 mA, V
= 0.5 mA, V
= V
Rising
IN
= 0V, I
= V
Conditions
IN
= 0V, I
= C
IN
OUT
OUT
OUT
OUT
Falling
IN
IN
= 10 μF,
= 0 mA
= 1.8V
= 1.8V
= 0 mA,