LM185-25 National Semiconductor, LM185-25 Datasheet - Page 4

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LM185-25

Manufacturer Part Number
LM185-25
Description
Micropower Voltage Reference Diode
Manufacturer
National Semiconductor
Datasheet
DataSheet4U.com
www.DataSheet4U.com
DataSheet
4
U
.com
www.national.com
Reverse
Breakdown
Voltage
Minimum
Operating
Current
Reverse
Breakdown
Voltage Change
with Current
Reverse
Dynamic
Impedance
Wideband
Noise (rms)
Long Term
Stability
Average
Temperature
Coefficient
(Note 7)
Electrical Characteristics
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed.
Note 2: Refer to RETS185H-2.5 for military specifications.
Note 3: For elevated temperature operation, T
LM185
LM285
LM385
Parameter
150˚C
125˚C
100˚C
T
20 µA ≤ I
mA
LM385M3-2.5
20 µA ≤ I
mA
1 mA ≤ I
mA
I
f = 20 Hz
I
10 Hz ≤ f ≤ 10
kHz
I
T = 1000 Hr,
T
±
I
X Suffix
Y Suffix
All Others
R
R
R
R
A
A
0.1˚C
θ
θ
Conditions
= 100 µA,
= 100 µA,
= 100 µA,
= 100 µA
= 25˚C,
= 25˚C
ja
jc
Thermal Resistance
(Junction to Ambient)
(Junction to Case)
R
R
R
≤ 20
≤ 20
≤ 1
J MAX
Typ
120
2.5
13
20
is:
1
DataSheet4U.com
170˚C/W (0.125" Leads)
(Note 5) (Note
180˚C/W (0.4" Leads)
Tested
LM185BX-2.5
LM185BY-2.5
LM285BX-2.5
LM285BY-2.5
Limit
2.462
2.538
LM185-2.5
LM285-2.5
20
10
30
50
8)
1
TO-92
N/A
4
Design
(Note
Limit
150
1.5
30
20
6)
440˚C/W 165˚C/W 283˚C/W
80˚C/W
TO-46
Tested
2.462
2.538
Limit
(Note
2.0
20
20
30
50
5)
LM385BX-2.5
LM385BY-2.5
LM385B-2.5
SO-8
N/A
(Note 6)
Design
Limit
150
2.5
30
25
SOT-23
N/A
Tested Design
(Note
2.425
2.575
Limit
2.0
20
15
20
5)
LM385-2.5
Limit
(Note
150
2.5
30
20
25
6)
ppm/˚C
ppm/˚C
ppm/˚C
V(Max)
(Limit)
V(Min)
(Max)
(Max)
(Max)
(Max)
Units
ppm
mV
mV
µA
µV

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