MSAT-N25 Aeroflex Circuit Technology, MSAT-N25 Datasheet

MSAT-N25

Manufacturer Part Number

MSAT-N25

Description

Nip Diode Attenuator Shunt Element

Manufacturer

Aeroflex Circuit Technology

Datasheet

1.MSAT-N25.pdf (4 pages)

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MSAT-N25

NIP Diode Attenuator Shunt Element

Description

Electrical Specifications,

Revision Date: 11/4/2009

A broadband, High Linearity medium power shunt NIP

Attenuator element 1.9 X 1.1 mm DFN package. This

device is designed for wireless Telecommunication

infrastructure and test instrument applications. It is

also suited for other applications in 0.1 ~ 10 GHz

range.

Absolute Maximum Ratings

METELICS

SYMBOL

Rs High

Rs Low

Rs min

RATING

SOLDER

STG

dis

IF = 10 mA

I = -100 mA

I = -10 mA

I = 1 mA

= 10 mA

TEST CONDITIONS

(2012)

Plastic Molded DFN

IR = 6 mA

+260

C per JEDEC J-STD-20C

= +25 °C

-65 to +125

LIMITS

2 (CW)

+175

200

F = 500 MHz

10% / 90%

F = 500 MHz

Features

• Low Distortion Harmonics at 85 dBc Typical

• Broadband performance, beyond 10 GHz

• Low Insertion loss & high attenuation

range, 27 dB

2000

MIN

200

–

TYPICAL

3000

1.5

–

UNITS

5000

4000

Watts

MAX

2.5

C/W

–

UNITS

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