LM5110-1/2/3M National Semiconductor Corporation, LM5110-1/2/3M Datasheet - Page 6

• Manufacturer Part Number: LM5110-1/2/3M
• Description: Dual 5A Compound Gate Driver With Negative Output Voltage Capabilitythe LM5110 Dual Gate Driver Replaces Industry Standard Gate Drivers With Improved Peak Output Current And Efficiency. Each "compound" Output Driver Stage Includes MOS And Bipolar Tra
• Manufacturer: National Semiconductor Corporation

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SWITCHING CHARACTERISTICS
td1
td2
t
t
LATCHUP PROTECTION
r
f
Electrical Characteristics
T
specified.
Note 1: Absolute Maximum Ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions under which operation of the device
is intended to be functional. For guaranteed specifications and test conditions, see the Electrical Characteristics.
Timing Waveforms
Symbol
J
= −40˚C to +125˚C, V
Propagation Delay Time Low to
High, IN rising (IN to OUT)
Propagation Delay Time High to
Low, IN falling (IN to OUT)
Rise Time
Fall Time
AEC - Q100, Method 004
Parameter
CC
= 12V, V
(a)
EE
= IN_REF = 0V, nSHDN = V
FIGURE 1. (a) Inverting, (b) Non-Inverting
(Continued)
C
1
C
1
C
1
C
1
T
J
LOAD
LOAD
LOAD
LOAD
= 150˚C
= 2 nF, see Figure
= 2 nF, see Figure
= 2.0 nF, see Figure
= 2 nF, see Figure
Conditions
20079205
6
CC
, No Load on OUT_A or OUT_B, unless otherwise
Min
Typ
500
25
25
14
12
(b)
Max
40
40
25
25
Units
20079206
mA
ns
ns
ns
ns