ATA20 White Electronic Designs Corporation, ATA20 Datasheet - Page 64

• Manufacturer Part Number: ATA20
• Description: Density = 8MB-160MB ;; Memory Device = Hitachi Flash ;; Organization = X16/x8 ;; Speed (ns) = 250 ;; Volt = 3/5
• Manufacturer: White Electronic Designs Corporation

June 2000 Rev. 5 – ECO #12935
Revision Record
Rev. Date
0.0
0.1
0.2
0.3
0.4
7PxxxATA20xxC25
June 16, 1998
January 25,
1999
April 9, 1999
May 14, 1999
August 27, 1999 Page 1: Added the 112MB and 128MB capacities and their
Initial issue
Card Line up table
Card pin explanation
New Block Diag and Note
CIS changes: reformat CIS and changes in
ATA Command specifications
DC Characteristics-3 (5 V)
DC Characteristics-4 (3.3 V)
Power On Reset Characteristics
Contents of Modification
-
changes for WAIT and INPACK
5. Identify Drive Information (table) (page 40)
addresses: 004H, 010H, 012H, 050H, 05AH, 070H,
072H, 07AH, 080H, 088H,
Change of test conditions:
I
I
I
I
I
I
I
Change of test conditions:
I
I
I
I
I
I
tsu(RESET), tsu(VCC) min: 250 ms to 100 ms
Page 1: add “industrial temp range”
Add industrial temp range to the specification
Company name change
part numbers to the list of ATA20 series cards.
In the Features section, type I housing was added
to the specifications to reflect the choice between
type I and type II housing.
In the Features section, the part number for the
Hitachi memory component was changed from
HN29W6411 to HN29W6411A, to reflect the new
memory component used for these cards.
In the features section, the data write endurance
was changed from 100,000 cycles to 300,000. This
change is resulting from the change in memory
SP1
SP1
CCR
CCR
CCW
CCR
CCR
SP1
SP1
CCR
CCR
CCR
CCR
typ: 0.5 mA to 0.5/0.7/1.0 mA
max: TBD to 1.0/1.5/2.0 mA
typ: 0.3 mA to
max: TBD to
(DC) typ: 50 mA to 40/40/40 mA
, I
, I
, I
, I
, I
, I
, I
(DC) typ: 0.5 mA to 45/45/45 mA
Change of data field type information: word
address 1
Change of total bytes: word address 7 to 8
Change of total default value: word address 51
CCW
CCW
CCW
CCW
CCW
CCW
CCW
(DC) max: TBD to 75/75/75 mA
(Peak) typ: 100 mA to 80 mA
(Peak) max: TBD to 120 mA
(DC) typ: 30 mA to
(DC) max: TBD to
(Peak) typ: 60 mA to 50/50/50 mA
(Peak) max: TBD to 80/80/80 mA
CMOS level between to CMOS level during
CMOS level between to CMOS level during
0.3/0.4/0.5 mA
0.6/0.8/1.0 mA
64
White Electronic Designs Corporation [phone]
50/50/50 mA
25/25/25 mA
Drawn by
W. Brys
W. Brys
W. Brys
M. Garrett
Approved by
W. Brys
W. Wrotek
W. Wrotek
W. Wrotek
W. Brys