SI7192DP Vishay Intertechnology, SI7192DP Datasheet
SI7192DP
Manufacturer Part Number
SI7192DP
Description
N-channel 30-V (d-s) Mosfet
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7192DP.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI7192DP-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
38 609
Part Number:
SI7192DP-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
PRODUCT SUMMARY
Ordering Information: Si7192DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
DS
30
(V)
8
6.15 mm
D
7
D
0.00225 at V
0.0019 at V
6
D
PowerPAK
R
http://www.vishay.com/ppg?73257
5
Bottom View
DS(on)
D
GS
GS
(Ω)
J
1
= 10 V
®
= 150 °C)
= 4.5 V
b, f
S
SO-8
2
S
N-Channel 30-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
G
60
60
(A)
a
d, e
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
= 25 °C, unless otherwise noted
Q
43.5 nC
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free
• TrenchFET
• 100 % R
• 100 % Avalanche Tested
• VRM, POL, Server
• High Current DC/DC
Symbol
Symbol
T
R
R
- Low-Side
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
®
Gen III Power MOSFET
Typical
G
0.9
15
N-Channel MOSFET
- 55 to 150
6.25
5.6
4.0
Limit
42
34
± 20
66.6
100
125
104
260
60
60
60
30
50
b, c
b, c
b, c
b, c
D
S
a
a
a
b, c
Maximum
1.2
20
Vishay Siliconix
Si7192DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1
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