LPT16ED SiGe Semiconductor, LPT16ED Datasheet - Page 3
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LPT16ED
Manufacturer Part Number
LPT16ED
Description
30 GHZ Bipolar Transistor
Manufacturer
SiGe Semiconductor
Datasheet
1.LPT16ED.pdf
(5 pages)
AC Electrical Characteristics
Typical Performance Characteristics
Please refer to application note (Document 07AN001).
Typical Applications Information
Series or parallel feedback oscillators at 5-16 GHz. (Please refer to application note, Document 07AN001).
38-DST-01 Rev 2.3 Sept 5/02
Symbol
MAG/
IS
MSG
21
I
2
Insertion Power Gain
(Z
Maximum Available
Gain or Maximum Stable
Gain
S
= Z
Parameter
L
= 50Ω)
Residual
(dBc/Hz)
Phase
Noise
V
f = 16GHz
V
f = 16GHz
V
f = 16GHz
V
f = 16GHz
CE
CE
CE
CE
= 1.5V, I
= 3.0V, I
= 1.5V, I
= 3.0V, I
Typical Measurements @
10 GHz, I
Note
Frequency (Hz)
C
C
C
C
C
= 10mA,
= 20mA,
= 10mA,
= 20mA,
=5mA, V
CE
=1V
Min.
0.7
2.3
3.3
4.9
30 GHz SiGe Bipolar Transistor
Typ.
1.0
2.6
3.6
5.2
Max.
1.3
2.9
4.2
5.6
LPT16ED
Unit
dB
dB
dB
dB
Final
3 of 5