SUP65P06 Temic Semiconductors (acquired by ATMEL Corporation), SUP65P06 Datasheet - Page 2

• Manufacturer Part Number: SUP65P06
• Description: P-channel Enhancement-mode Transistors
• Manufacturer: Temic Semiconductors (acquired by ATMEL Corporation)

Notes:
a.
b. Pulse test; pulse width
c.
SUP/SUB65P06-20
2
Specifications (T
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Diode Ratings and Characteristics (T
Continuous Current
Pulsed Current
Forward Voltage
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
c
c
a
Parameter
b
c
c
c
c
c
b
b
300 s, duty cycle
J
= 25 C Unless Otherwise Noted)
b
b
V
Symbol
I
RM(REC)
V
r
(BR)DSS
I
DS(on)
t
t
I
I
C
V
D(on)
C
C
Q
d(off)
GS(th)
Q
d(on)
I
Q
GSS
DSS
g
Q
SM
t
I
t
t
oss
rss
SD
rr
fs
iss
gd
gs
r
f
s
rr
g
2%.
I
V
V
C
V
D
V
V
V
GS
DS
GS
DS
DS
= 25 C)
GS
= –30 V, V
= –10 V, I
= –10 V, I
–65 A, V
V
I
= –60 V, V
= –60 V, V
V
V
F
V
= 0 V, V
V
V
V
V
DD
DD
DS
DS
= –65 A, di/dt = 100 A/ s
DS
I
GS
GS
DS
DS
F
Test Condition
= –30 V, R
= –65 A, V
= V
= –5 V, V
= 0 V, V
= –10 V, I
a
= 0 V, I
= –15 V, I
= –60 V, V
GEN
GS
DS
D
GS
D
GS
GS
, I
= –30 A, T
= –30 A, T
= –25 V, f = 1 MHz
= –10 V, I
= –10 V, R
D
GS
,
D
= 0 V, T
= 0 V, T
GS
= –250 A
D
GS
= –250 A
D
L
L
=
GS
= –10 V
= –30 A
= –30 A
= 0.47
= 0 V
= 0 V
20 V
J
J
J
J
D
= 125 C
= 175 C
G
= 175 C
= 125 C
= –65 A
= 2.5
P-39628—Rev. A, 28-Dec-94
Min
–120
–2.0
–60
25
0.017
0.245
4500
Typ
–3.0
–1.1
870
350
85
24
22
15
40
65
30
70
7
0.020
0.033
0.042
Max
–150
–200
–4.0
–1.4
0.54
–50
120
120
–65
120
–1
40
80
60
100
9
Siliconix
Unit
nA
pF
nC
ns
ns
ns
V
V
A
A
A
V
A
S
C