16C6NL Renesas Technology / Hitachi Semiconductor, 16C6NL Datasheet - Page 33
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16C6NL
Manufacturer Part Number
16C6NL
Description
Renesas MCU
Manufacturer
Renesas Technology / Hitachi Semiconductor
Datasheet
1.16C6NL.pdf
(70 pages)
- Current page: 33 of 70
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M16C/6N Group (M16C/6NL, M16C/6NN)
Rev.2.10
REJ03B0061-0210
Under development
This document is under development and its contents are subject to change.
Table 5.3 Recommended Operating Conditions (2)
NOTES:
f(XIN)
f(XCIN)
f(Ring)
f(PLL)
f(BCLK)
t
su(PLL)
Symbol
1. Referenced to VCC = 3.0 to 5.5 V at Topr = –40 to 85°C unless
2. Relationship between main clock oscillation frequency and supply
3. Execute program/erase of flash memory by VCC = 3.3 ± 0.3 V or
4. When using 16 MHz and over, use PLL clock. PLL clock oscillation
otherwise specified.
voltage is shown right.
VCC = 5.0 ± 0.5 V.
frequency which can be used is 16 MHz, 20 MHz or 24 MHz.
Aug 25, 2006
Main clock input oscillation No wait Mask ROM version VCC = 3.0 to 5.5 V
frequency
Sub clock oscillation frequency
On-chip oscillation frequency
PLL clock oscillation frequency
CPU operation clock
PLL frequency synthesizer stabilization wait time
page 33 of 67
(2) (3) (4)
Parameter
Flash memory version
(1)
VCC = 3.0 to 5.5 V
16.0
0.0
Min.
16
Main clock input oscillation frequency
(Mask ROM version / Flash memory
0
0
VCC [V] (main clock: no division)
Standard
5. Electric Characteristics
32.768
version: no wait)
Typ.
1
3.0
Max.
16
50
24
24
20
5.5
MHz
MHz
MHz
MHz
Unit
kHz
ms
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