CEM4410A Chino Excel Technology, CEM4410A Datasheet - Page 3

• Manufacturer Part Number: CEM4410A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino Excel Technology

5
ELECTRICAL CHARACTERISTICS (T
Notes
a.Surface Mounted on FR4 Board, t 10sec.
b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
Diode Forward Voltage
DRAIN-SOURCE DIODE CHARACTERISTICS
CEM4410A
3000
2500
2000
1500
1000
Parameter
500
25
20
15
10
5
0
0
Figure 1. Output Characteristics
0
0
V
V
DS
DS
Figure 3. Capacitance
0.5
5
, Drain-to Source Voltage (V)
, Drain-to-Source Voltage (V)
10
1.0
15
V
1.5
GS
Ciss
Coss
Crss
=10,8,6,5,4V
2.0
20
V
GS
Symbol
=3V
2.5
V
25
SD
A
=25 C unless otherwise noted)
3.0
30
5-26
b
V
GS
Condition
0.030
0.025
0.020
0.015
0.010
0.005
Figure 4. On-Resistance Variation with
= 0V, Is = 2.3A
50
40
30
20
10
0
0
0
0
Figure 2. Transfer Characteristics
Drain Current and Temperature
V
GS
V
1
GS
Tj=125 C
, Gate-to-Source Voltage (V)
I
=10V
5
D
, Drain Current(A)
2
25 C
10
3
Min Typ Max Unit
Tj=125 C
-55 C
-55 C
25 C
4
15
0.7
5
C
20
1.1
6
V