FS20UMA-4A Mitsubishi Electronics America, Inc., FS20UMA-4A Datasheet - Page 2

• Manufacturer Part Number: FS20UMA-4A
• Description: N-channel Power MOSFET High-speed Switching Use: 200v, 20a
• Manufacturer: Mitsubishi Electronics America, Inc.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
V
V
I
I
V
r
V
C
C
C
t
t
t
t
V
R
GSS
DSS
d (on)
r
d (off)
f
Symbol
DS (ON)
y
GS (th)
DS (ON)
SD
iss
oss
rss
th (ch-c)
(BR) DSS
(BR) GSS
fs
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
100
80
60
40
20
50
40
30
20
10
POWER DISSIPATION DERATING CURVE
0
0
0
0
DRAIN-SOURCE VOLTAGE V
Parameter
CASE TEMPERATURE T
OUTPUT CHARACTERISTICS
4
50
(TYPICAL)
8
100
6V
(Tch = 25°C)
8V
10V
12
V
I
I
V
V
I
I
I
I
V
V
I
Channel to case
GS
D
GS
D
D
D
D
S
GS
DS
DS
DD
= 10A, V
= 1mA, V
= 1mA, V
= 10A, V
= 10A, V
= 10A, V
= 20V
= ±10 A, V
150
= 200V, V
= 25V, V
= ±20V, V
= 100V, I
T
Pulse Test
P
C
C
16
D
(°C)
= 25°C
DS
= 80W
GS
GS
GS
DS
GS
DS
(V)
5V
GS
4V
D
GS
= 0V
DS
= 10V
= 10V
= 10V
200
= 0V
= 10V
DS
20
= 10A, V
= 0V, f = 1MHz
= 0V
= 0V
= 0V
Test conditions
GS
= 10V, R
GEN
10
10
10
10
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
7
5
3
2
2
1
0
= R
0
2
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DRAIN-SOURCE VOLTAGE V
T
Single Pulse
3 5 7
GS
C
= 25°C
OUTPUT CHARACTERISTICS
= 50
MITSUBISHI Nch POWER MOSFET
2
10
1
6V
10V
HIGH-SPEED SWITCHING USE
V
2
GS
(TYPICAL)
3 5 7
4
= 20V
Min.
200
±20
2.0
—
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—
—
—
—
—
—
—
—
—
—
—
10
6
2
FS20UMA-4A
2
Limits
1650
tw = 10µs
100µs
1ms
10ms
DC
0.14
1.40
18.0
0.95
Typ.
200
290
3.0
3 5 7
65
20
40
70
—
—
—
—
P
T
Pulse Test
D
C
8
= 80W
= 25°C
DS
DS
10
3.5V
(V)
(V)
4V
3
Max.
0.18
1.80
1.56
±10
4.0
10
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—
—
—
—
—
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1
2
Sep.1998
°C/W
Unit
mA
pF
pF
pF
ns
ns
ns
ns
V
V
V
V
S
V
A