FS20VS-6 Mitsubishi Electronics America, Inc., FS20VS-6 Datasheet - Page 4
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FS20VS-6
Manufacturer Part Number
FS20VS-6
Description
N-channel Power MOSFET High-speed Switching Use: 300v, 20a
Manufacturer
Mitsubishi Electronics America, Inc.
Datasheet
1.FS20VS-6.pdf
(4 pages)
10
10
10
1.4
1.2
1.0
0.8
0.6
0.4
20
16
12
–1
8
4
0
7
5
3
2
7
5
3
2
1
0
0
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
Tch = 25°C
I
V
I
Pulse Test
–50
–50
V
I
D
D
D
GS
GS
ON-STATE RESISTANCE VS.
= 20A
BREAKDOWN VOLTAGE VS.
= 1/2I
= 1mA
CHANNEL TEMPERATURE
CHANNEL TEMPERATURE
GATE-SOURCE VOLTAGE
= 10V
20
= 0V
GATE CHARGE Q
VS.GATE CHARGE
D
0
0
100V
V
(TYPICAL)
(TYPICAL)
(TYPICAL)
40
DS
= 50V
50
50
60
100
100
g
(nC)
200V
80
150
150
100
10
10
10
10
–1
–2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
–4
D=1
0.5
0.2
0.1
2 3 57
5.0
4.0
3.0
2.0
1.0
40
32
24
16
8
0
0
10
0
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
SOURCE-DRAIN VOLTAGE V
–3
T
–50
Single Pulse
V
I
2 3 57
C
0.05
0.02
0.01
FORWARD CHARACTERISTICS
D
DS
= 125°C
= 1mA
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
MITSUBISHI Nch POWER MOSFET
0.8
= 10V
SOURCE-DRAIN DIODE
PULSE WIDTH t
10
CHARACTERISTICS
–2
HIGH-SPEED SWITCHING USE
0
2 3 57
(TYPICAL)
1.6
(TYPICAL)
50
10
–1
75°C
25°C
2.4
2 3 5710
100
w
V
Pulse Test
(s)
GS
3.2
0
FS20VS-6
P
2 3 5710
= 0V
tw
D=
SD
DM
150
T
tw
(V)
T
4.0
1
2 3 5710
Feb.1999
2