MA2S728 Panasonic, MA2S728 Datasheet
MA2S728
Manufacturer Part Number
MA2S728
Description
Silicon epitaxial planar type
Manufacturer
Panasonic
Datasheet
1.MA2S728.pdf
(2 pages)
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Schottky Barrier Diodes (SBD)
MA2S728
Silicon epitaxial planar type
For switching circuits
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
• Super-small SS-mini type 2-pin package
• Allowing high-density mounting
• Low forward rise voltage (V
• Small temperature coefficient of forward characteristic
• Extremely low reverse current I
Reverse voltage (DC)
Peak reverse voltage
Peak forward current
Forward current (DC)
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
Detection efficiency
efficiency (η)
Pulse Generator
(PG-10N)
R
s
2. Rated input/output frequency: 2 000 MHz
3. * : t
= 50 Ω
human body and the leakage of current from the operating equipment
Parameter
Parameter
Bias Application Unit N-50BU
rr
measuring instrument
A
*
W.F.Analyzer
(SAS-8130)
R
i
= 50 Ω
F
) and satisfactory wave detection
Symbol
R
V
I
T
V
I
T
FM
RM
stg
F
R
a
j
Symbol
= 25°C
V
V
C
a
I
t
η
R
rr
F1
F2
t
= 25°C
V
−55 to +125
R
Rating
150
125
t
30
30
30
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
V
I
I
V
I
I
V
R
= 0.35 ns
F
F
F
rr
= 2 µs
L
R
R
in
= 1 mA
= 30 mA
= I
t
= 1 mA, R
p
= 3.9 kΩ , C
= 30 V
= 1 V, f = 1 MHz
= 3 V
R
= 10 mA
(peak)
t
Unit
mA
mA
°C
°C
V
V
Conditions
L
, f = 30 MHz
I
= 100 Ω
F
L
I
I
R
= 10 pF
Output Pulse
F
R
L
= 10 mA
= 10 mA
= 100 Ω
t
I
rr
rr
= 1 mA
Marking Symbol: B
t
2
Min
1.60 ± 0.05
1.20
+ 0.05
− 0.03
SS-Mini Type Package (2-pin)
Typ
1.5
65
1
1
Max
300
0.4
1
1 : Anode
2 : Cathode
Unit : mm
Unit
nA
pF
ns
%
V
V
1
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MA2S728 Summary of contents
Page 1
... Schottky Barrier Diodes (SBD) MA2S728 Silicon epitaxial planar type For switching circuits I Features • Super-small SS-mini type 2-pin package • Allowing high-density mounting • Low forward rise voltage (V ) and satisfactory wave detection F efficiency (η) • Small temperature coefficient of forward characteristic • Extremely low reverse current I ...
Page 2
... MA2S728 75°C 25° − 20°C = 125° –1 10 – 0.2 0.4 0.6 0.8 1.0 1 Forward voltage V F 3.0 2.5 2.0 1.5 1.0 0 Reverse voltage Schottky Barrier Diodes (SBD) 1.6 1.4 1.2 1.0 0 0 − ...