SFS4936 SemiWell Semiconductor, SFS4936 Datasheet

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SFS4936

Manufacturer Part Number
SFS4936
Description
Dual N-channel Mosfet
Manufacturer
SemiWell Semiconductor
Datasheet
Absolute Maximum Ratings
Features
Thermal Characteristics
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
December, 2002. Rev. 1.
for Battery switch, Load switch and Motor controler.
Low R
Gate Charge (Typical 20nC)
Improved dv/dt Capability
Maximum Junction Temperature Range (150°C)
Available in Tape and Reel
Low R
Symbol
Symbol
T
V
STG,
V
R
I
P
T
DSS
I
DM
SemiWell
GS
θJA
D
D
L
DS(on)
DS(on)
T
J
(0.035Ω )@V
(0.053Ω )@V
Drain to Source Voltage
Continuous Drain Current(@T
Drain Current Pulsed
Gate to Source Voltage
Total Power Dissipation Single Operation (T
Total Power Dissipation Single Operation (T
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Resistance, Junction-to-Ambient
Semiconductor
GS
GS
=10V
=4.5V
Parameter
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
Parameter
A
= 25
°C)
(Note 4)
A
A
=25
=70
°C
°C
Dual N-Channel MOSFET
)
Min.
)
-
(Note 1)
Typ.
Value
Symbol
-
8-SOIC
- 55 ~ 150
D
Value
1
1.28
±
300
5.8
2.0
D
30
30
D
20
D
D
D
1
2
2
1
1
D
Max.
62.5
SFS4936
2
5
6
7
8
D
2
S
1
G
Units
1
Units
°C
°C
°C/W
S
W
W
V
A
A
V
2
4
3
2
1
G
G
S
G
S
2
2
1
1
2
1/6

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SFS4936 Summary of contents

Page 1

... Parameter Thermal Resistance, Junction-to-Ambient R θJA December, 2002. Rev. 1. Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Dual N-Channel MOSFET Parameter ° (Note 1) °C = °C = Min. - (Note 4) SFS4936 Symbol 8-SOIC ...

Page 2

... SFS4936 Electrical Characteristics Symbol Parameter Off Characteristics BV Drain-Source Breakdown Voltage DSS Δ Breakdown Voltage Temperature DSS coefficient Δ Drain-Source Leakage Current DSS Gate-Source Leakage, Forward I GSS Gate-Source Leakage, Reverse On Characteristics V Gate Threshold Voltage GS(th) Static Drain-Source On-state R DS(ON) Resistance Dynamic Characteristics C Input Capacitance ...

Page 3

... oss rss gd 8 ※ Notes : f=1MHz SFS4936 Fig 2. Transfer Characteristics o 125 -55 C Notes : ※ 15V DS 2. 250µ s Pulse Test Gate-Source Voltage [V] GS Allowable Case Temperature 150 ℃ ...

Page 4

... SFS4936 Fig 7. Breakdown Voltage Variation vs. Junction Temperature 1.2 1.1 1.0 0.9 0.8 -100 - Junction Temperature [ J Fig 9. Normalized Transient Thermal Response Curve 4/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. Fig 8. On-Resistance Variation 2.0 1.5 1.0 ※ Notes : ...

Page 5

... V ( 0.5 rated V ( 0.5 rated V ( 0.5 rated 10% 10% 10% 10% 10% 10% 10 DUT DUT DUT DUT SFS4936 Charge Charge Charge ...

Page 6

... SFS4936 8-SOIC Package Dimension Dim. Min. A 1.35 B 0.1 C 0.38 D 0.19 E 4 5.8 I 0.5 J 0’ K 0.250 E G 6/6 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved. mm Typ. Max. 1.55 1.75 0.175 0.25 0.445 0.510 0.22 0.25 4.9 5 3.9 4 1.27 BSC 6 6.2 0.715 0.93 4’ 8’ 0.375 0. 0 Inch Min. Typ. Max. 0.053 0.061 0.069 0.004 ...

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