MTSF1P02HD ON Semiconductor, MTSF1P02HD Datasheet - Page 2

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MTSF1P02HD

Manufacturer Part Number
MTSF1P02HD
Description
Hdtmos Power MOSFETs, Micro8, Single P-channel, VDSS 20
Manufacturer
ON Semiconductor
Datasheet
*Negative signs for P–Channel device omitted for clarity.
1. When mounted on 1 square FR–4 or G–10 board (V GS = 4.5 V, @ Steady State)
2. When mounted on minimum recommended FR–4 or G–10 board (V GS = 4.5 V, @ Steady State)
3. Repetitive rating; pulse width limited by maximum junction temperature.
MAXIMUM RATINGS
THERMAL RESISTANCE
Drain–to–Source Voltage
Drain–to–Gate Voltage (R GS = 1.0 M )
Gate–to–Source Voltage – Continuous
Drain Current – Continuous @ T A = 25 C (Note 2.)
Drain Current
Drain Current
Total Power Dissipation @ T A = 25 C (Note 1.)
Total Power Dissipation @ T A = 25 C (Note 2.)
Operating and Storage Temperature Range
Thermal Resistance – Junction to Ambient, PCB Mount (Note 1.)
Thermal Resistance
Linear Derating Factor (Note 1.)
Linear Derating Factor (Note 2.)
– Continuous @ T A = 70 C (Note 2.)
– Pulsed Drain Current (Note 3.)
– Junction to Ambient, PCB Mount (Note 2.)
(T J = 25 C unless otherwise noted) *
Rating
Rating
http://onsemi.com
MTSF1P02HD
2
Symbol
R JA
R JA
Symbol
T J , T stg
V DGR
V DSS
V GS
I DM
P D
P D
I D
I D
Typ.
125
55
– 55 to 150
Value
14.4
14.3
0.78
6.25
1.8
1.6
1.8
20
20
Max.
8.0
160
70
mW/ C
mW/ C
Watts
Watts
Unit
Unit
Vdc
Vdc
Vdc
Adc
Apk
C/W
C

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