MT58L256L32F Micron Semiconductor Products, Inc., MT58L256L32F Datasheet - Page 16

• Manufacturer Part Number: MT58L256L32F
• Description: 8Mb Syncburst SRAM, 3.3V Vdd, 3.3V or 2.5V I/O, Flow-Through,
• Manufacturer: Micron Semiconductor Products, Inc.

2.5V I/O DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(0°C
NOTE: 1. All voltages referenced to V
8Mb: 512K x 18, 256K x 32/36 Flow-Through SyncBurst SRAM
MT58L512L18F_C.p65 – Rev. 2/02
DESCRIPTION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Supply Voltage
Isolated Output Buffer Supply
T
2. Overshoot:
3. MODE has an internal pull-up, and input leakage = ±10µA.
4. The load used for V
5. This parameter is sampled.
A
Undershoot: V
Power-up:
AC I/O curves are available upon request.
+70°C; V
DD
V
V
= +3.3V +0.3V/-0.165V; V
IH
IL
IH
-0.7V for t
OH
+4.6V for t
+3.6V and V
, V
OL
testing is shown in Figure 4 for 2.5V I/O. AC load current is higher than the stated DC values.
SS
(GND).
0V
t
DD
Output(s) disabled,
KC/2 for I
t
KC/2 for I
Data bus (DQx)
0V
CONDITIONS
I
I
3.135V for t
V
I
I
OH
OH
OL
OL
IN
Inputs
= -2.0mA
= -1.0mA
= 2.0mA
= 1.0mA
V
IN
V
DD
DD
20mA
20mA
Q = +2.5V +0.4V/-0.125V unless otherwise noted)
Q (DQx)
V
DD
200ms
16
FLOW-THROUGH SYNCBURST SRAM
SYMBOL
8Mb: 512K x 18, 256K x 32/36
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
V
V
V
V
V
V
IL
V
DD
IL
IH
OH
OH
OL
OL
DD
IH
IL
O
Q
I
Q
3.135
2.375
MIN
-0.3
-1.0
-1.0
1.7
1.7
1.7
2.0
–
–
V
V
DD
DD
MAX
Q + 0.3
0.7
1.0
1.0
0.7
0.4
3.6
2.9
–
–
+ 0.3
UNITS
µA
µA
©2002, Micron Technology, Inc.
V
V
V
V
V
V
V
V
V
NOTES
1, 2
1, 2
1, 2
1, 4
1, 4
1, 4
1, 4
3
1
1