SBT80-04Y-DL-E ON Semiconductor, SBT80-04Y-DL-E Datasheet

SBT80-04Y-DL-E

Manufacturer Part Number

SBT80-04Y-DL-E

Description

Specifications: Diode Type: Schottky ; Diode Configuration: 1 Pair Common Cathode ; Voltage - DC Reverse (Vr) (Max): 40V ; Current - Average Rectified (Io) (per Diode): 8A ; Voltage - Forward (Vf) (Max) @ If: 550mV @ 3A ; Current - Reverse Leakage @

Manufacturer

ON Semiconductor

Datasheet

1.SBT80-04Y-DL-E.pdf (3 pages)

Available stocks

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Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SBT80-04Y-DL-E

Manufacturer:

SANYO

Quantity:

7 000

Company:

BOSTOCK HK LIMITED

Part Number:

SBT80-04Y-DL-E

Manufacturer:

SONYO

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Meier Automation Equipment Co., Limited

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SBT80-04Y-DL-E

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SONY/索尼

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20 000

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Ordering number : ENN7789

SBT80-04Y

Applications

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Note) * : Value per element

Repetitive Peak Reverse Voltage

Nonrepetitive Peak Reverse Surge Voltage

Average Output Current

Surge Forward Current

Junction Temperature

Storage Temperature

Reverse Voltage

Forward Voltage

Reverse Current

Interterminal Capacitance

Thermal Resistance

•

High frequency rectification (switching regulators, converters and choppers).

Guaranteed up to Tj=150 C.

Low forward voltage (V F max=0.55V).

Fast reverse recovery time.

Low switching noise.

High reliability due to highly reliable planar structure.

Surface mount type device reducing the assembling time and facilitating compact and high-density assembly of

SBT80-04Y-applied equipment.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

SANYO Electric Co.,Ltd. Semiconductor Company

Symbol

Rth(j-c)

V RRM

V RSM

I FSM

Tstg

V R

V F

I O

I R

Schottky Barrier Diode (Twin Type · Cathode Common)

40V, 8A Rectifier

50Hz resistive load, Sine wave Tc=116 C

50Hz sine wave, 1 cycle

I R =1mA, Tj=25 C*

I F =3A, Tj=25 C*

V R =20V, Tj=25 C*

V R =10V, Tj=25 C*

Junction-Case : Smoothed DC

SBT80-04Y

Conditions

62405SD MS IM TB-00001571

min

Ratings

typ

Ratings

160

--55 to +150

max

0.55

0.1

4.0

No.7789-1/3

C / W

Unit

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