Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BV
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
! ! ! ! Package, marking, and packaging specifications
! ! ! ! Absolute maximum ratings (Ta=25°C)
! ! ! ! Electrical characteristics (Ta=25°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Basic ordering unit (pieces)
Packaging type
CEO
Part No.
Marking
Parameter
>40V (I
Code
Parameter
UMT4401
SST4401
MMST4401
2N4401
C
=1mA)
UMT4401
UMT3
T106
3000
R2X
Symbol
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
C
SST4401
Symbol
V
BV
BV
BV
V
SST3
T116
I
I
CE(sat)
3000
BE(sat)
Cob
R2X
Cib
tstg
CBO
EBO
h
f
td
T
tr
tf
CBO
CEO
EBO
FE
-55~+150
Limits
0.625
150
0.6
0.2
60
40
MMST4401
6
SMT3
Min.
250
T146
3000
100
R2X
60
40
20
40
80
40
6
-
-
-
-
-
-
-
-
-
-
-
-
UMT4401 / SST4401 / MMST4401 / 2N4401
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2N4401
Unit
TO-92
˚C
˚C
V
V
V
A
W
3000
T93
-
Max.
0.75
0.95
225
300
0.1
0.1
0.4
1.2
6.5
30
15
20
30
-
-
-
-
-
-
-
-
MHz
Unit
µA
µA
pF
pF
ns
ns
ns
ns
V
V
V
V
V
-
! ! ! ! External dimensions (Units : mm)
ROHM : UMT3
EIAJ : SC-70
ROHM : SST3
ROHM : SMT3
EIAJ : SC-59
ROHM : TO-92
EIAJ : SC-43
UMT4401
SST4401
MMST4401
2N4401
I
I
I
V
V
I
I
I
I
V
V
V
V
V
V
V
V
V
V
V
V
C
C
E
C
C
C
C
CB
EB
CE
CE
CE
CE
CE
CE
CB
EB
CC
CC
CC
CC
= 100µA
= 1mA
= 100µA
/I
/I
/I
/I
B
B
B
B
= 10V, I
= 10V, f = 100kHz
= 0.5V, f = 100kHz
= 35V
= 5V
= 1V, I
= 1V, I
= 1V, I
= 1V, I
= 2V, I
= 30V, V
= 30V, V
= 30V, I
= 30V, I
= 150mA/15mA
= 500mA/50mA
= 150mA/15mA
= 500mA/50mA
C
C
C
C
C
= 0.1mA
= 1mA
= 10mA
= 150mA
= 500mA
E
C
C
=- 20mA, f = 100MHz
EB(OFF)
EB(OFF)
= 150mA, I
= 150mA, I
= 2V, I
= 2V, I
(1)
(1)
B1
B1
(1)
(1)
C
C
=- I
=- I
0.65 0.65
Conditions
= 150mA, I
= 150mA, I
1.3±0.1
(3)
2.0±0.2
All terminals have the same
0.95 0.95
0.95 0.95
dimensions
2.9
1.9
2.9
1.9
4.8
(2) (3)
B2
B2
(2)
± 0.2
± 0.2
± 0.2
± 0.2
±
5
= 15mA
= 15mA
0.2
(2)
(2)
0.3
(3)
(3)
All terminals have the same
All terminals have the same
0.4
0.4
dimensions
dimensions
+0.1
−0
+0.1
− 0.05
+0.1
− 0.05
0.5
2.5 +0.3
±
−
B1
B1
0.1.
0.1
= 15mA
= 15mA
0.45
0.15
0.15±0.05
0.15
±
0.2
0.1
+0.1
− 0.06
0.95
− 0.06
+0.1
1.1
3.7
0.9±0.1
0.45
0.8
0.7±0.1
+0.2
− 0.1
±
+0.2
− 0.1
0.2
± 0.1
± 0.1
2.3
0
0.2Min.
0~0.1
~
0
0.1
~
0.1
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector