BSP317 Infineon Technologies Corporation, BSP317 Datasheet
BSP317
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BSP317 Summary of contents
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SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • -0.8...-2.0 V GS(th) Type V DS BSP 317 -200 V Type Ordering Code BSP 317 Q67000-S94 Maximum Ratings Parameter Drain source voltage Drain-gate voltage ...
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Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...
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Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ -0. DS(on)max, D Input capacitance MHz GS DS Output ...
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Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage -0. ...
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Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...
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Typ. output characteristics = ƒ parameter µ tot -0.7 D -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0 0 ...
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Drain-source on-resistance = ƒ (on) j parameter -0. Ω (on 98 typ -60 - Typ. capacitances ...
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Drain-source breakdown voltage = ƒ (BR)DSS j -240 V -230 V (BR)DSS -225 -220 -215 -210 -205 -200 -195 -190 -185 -180 -60 - Data Sheet Safe operating area I parameter : D = ...