2SD669 Hitachi Semiconductor (acquired by Renesas), 2SD669 Datasheet
2SD669
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2SD669 Summary of contents
Page 1
... Application Low frequency power amplifier complementary pair with 2SB649/A Outline TO-126 MOD Silicon NPN Epitaxial 1. Emitter 2. Collector 3. Base ...
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... Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1. Value Ratings Symbol 2SD669 V 180 CBO V 120 CEO ...
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... Collector to emitter V CE(sat) saturation voltage Base to emitter voltage V BE Gain bandwidth product f T Collector output Cob capacitance Notes: 1. The 2SD669 and 2SD669A are grouped Pulse test 2SD669 60 to 120 100 to 200 2SD669A 60 to 120 100 to 200 Maximum Collector Dissipation ...
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... Typical Output Characteristecs 1.0 0.8 0.6 0.4 0 Collector to emitter voltage V DC Current Transfer Ratio vs. Collector Current 300 250 200 150 100 Collector current (V) CE 1.2 1.0 0.8 0.6 0.4 0.2 100 300 1,000 3,000 (mA) C Typical Transfer Characteristics ...
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... 200 160 120 300 1,000 Collector Output Capacitance vs. Collector to Base Voltage MHz Collector to base voltage V (V) CB 2SD669, 2SD669A Gain Bandwidth Product vs. Collector Current 30 100 300 1,000 Collector current I (mA) C 100 5 ...
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Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm TO-126 Mod — — 0.67 g ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...