2SD968 Panasonic Industrial Company/Electronic Components, 2SD968 Datasheet
2SD968
Manufacturer Part Number
2SD968
Description
Silicon NPN Epitaxial Planer Type ( For Low-frequency Driver Amplification )
Manufacturer
Panasonic Industrial Company/Electronic Components
Datasheet
1.2SD968.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD968
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SD968-R(TX)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD968A
Manufacturer:
PANASONIC
Quantity:
2 916
Part Number:
2SD968A
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Company:
Part Number:
2SD968A-S(A/RS/-X)
Manufacturer:
HIT
Quantity:
55
Part Number:
2SD968A-S(A/RS/-X)
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SD968A-S(TX)
Manufacturer:
Panasonic
Quantity:
8 065
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification
Complementary to 2SB789 and 2SB789A
*
*1
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Printed circuit board: Copper foil area of 1cm
thickness of 1.7mm for the collector portion
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Marking
Symbol
h
FE1
Features
High collector to emitter voltage V
Large collector power dissipation P
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings
Electrical Characteristics
Rank classification
Parameter
Rank
h
Parameter
FE1
2SD968
2SD968A
2SD968
2SD968A
2SD968
2SD968A
2SD968
2SD968A
90 ~ 155
Symbol
WQ
VQ
V
V
V
I
I
P
T
T
CP
C
Q
C
j
stg
CBO
CEO
EBO
*
V
V
h
h
V
V
f
C
T
FE1
FE2
(Ta=25˚C)
Symbol
CEO
EBO
CE(sat)
BE(sat)
ob
*1
CEO
(Ta=25˚C)
C
130 ~ 220
.
–55 ~ +150
.
2
WR
VR
Ratings
R
or more, and the board
100
120
100
120
150
0.5
5
1
1
I
I
V
V
I
I
V
V
C
E
C
C
CB
CE
CE
CB
= 100 A, I
= 10 A, I
= 500mA, I
= 500mA, I
= 10V, I
= 10V, I
= 5V, I
= 10V, I
C
Unit
C
Conditions
E
C
˚C
˚C
E
W
V
V
V
A
A
= 500mA
B
= –50mA, f = 200MHz
= 0
B
B
= 150mA
= 0, f = 1MHz
= 0
= 50mA
= 50mA
*2
*2
*2
*2
Marking symbol :
1:Base
2:Collector
3:Emitter
0.4 0.08
0.5 0.08
1.5 0.1
45
min
100
120
3
90
50
5
3.0 0.15
4.5 0.1
1.6 0.2
2
EIAJ:SC–62
Mini Power Type Package
marking
0.85
100
120
W
V
1
typ
0.2
11
(2SD968A)
(2SD968)
*2
Pulse measurement
max
220
0.6
1.2
20
1.5 0.1
0.4 0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
1
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Marking = ac ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 47 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = 9N ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 4.7 ;; R2(Tr2)(kW ) = ;; Package = SMini5-G1
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Marking = em ;; VCEO(V) = 50 ;; VCEO(Tr2)(V) = ;; IC(A) = 0.1 ;; IC(Tr2)(A) = ;; PT(W) = 0.15 ;; R1(kW ) = 2.2 ;; R2(Tr2)(kW ) = 0.047 ;; Package = SMini5-F1
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2SD968 Summary of contents
Page 1
... Transistor 2SD968, 2SD968A Silicon NPN epitaxial planer type For low-frequency driver amplification Complementary to 2SB789 and 2SB789A Features High collector to emitter voltage V Large collector power dissipation P Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ...
Page 2
... Collector current — f=1MHz Ta=25˚ 100 ( V ) Collector to base voltage V CB 2SD968, 2SD968A I — 1.2 V =10V CE Ta=25˚C 1.0 0.8 0.6 0.4 0 Base current — 300 V =10V CE 250 Ta=75˚ ...