2N7002-01 Diodes, Inc., 2N7002-01 Datasheet - Page 3

• Manufacturer Part Number: 2N7002-01
• Description: 60V; N-channel Enchancement Mode Field Effect Transistor
• Manufacturer: Diodes, Inc.

DS11303 Rev. 12 - 2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0
10
9
7
4
1
0
8
6
5
3
2
0
-55
V = 10V
0
GS
Fig. 3 On-Resistance vs Junction Temperature
9.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.1V
V
-30
DS
V
Fig. 5 Typical Transfer Characteristics
T , JUNCTION TEMPERATURE (°C)
DS
= 10V
Fig. 1 On-Region Characteristics
1
j
0.2
,
DRAIN-SOURCE VOLTAGE (V)
10V
-5
ID, DRAIN CURRENT (A)
0.4
20
2
45
T = -55°C
T = +125°C
A
A
0.6
3
70
V
I = 200mA
D
95
T = +25°C
0.8
GS
T = +75°C
A
A
4
= 10V,
2.1V
120
5.0V
5.5V
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1
145
5
3 of 3
300
250
200
100
350
150
50
6
5
4
3
2
1
0
7
6
5
4
3
2
0
1
0
0
0
0
I = 50mA
D
Fig. 4 On-Resistance vs. Gate-Source Voltage
2
V
25
Fig. 2 On-Resistance vs Drain Current
GS
T , AMBIENT TEMPERATURE (°C)
0.2
Fig. 6 Max Power Dissipation vs.
, GATE TO SOURCE VOLTAGE (V)
A
4
V
50
GS
I , DRAIN CURRENT (A)
D
= 5.0V
Ambient Temperature
6
75
I = 500mA
D
0.4
V
8
GS
100 125
= 10V
10
0.6
12
150
14
0.8
175
T = 25°C
2N7002
j
16
200
1.0
18