2N7222 International Rectifier Corp., 2N7222 Datasheet

2N7222

Manufacturer Part Number

2N7222

Description

up to 28A N-channel Enhancement Mode MOSFET Power Transistor

Manufacturer

International Rectifier Corp.

Datasheet

1.2N7222.pdf (7 pages)

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POWER MOSFET

THRU-HOLE (TO-254AA)

For footnotes refer to the last page

Absolute Maximum Ratings

HEXFET

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance.

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

I D @ V GS = 10V, T C = 100°C Continuous Drain Current

I D @ V GS = 10V, T C = 25°C

www.irf.com

Product Summary

Part Number

IRFM440

P D @ T C = 25°C

transistor’s totally isolated package eliminates the

MOSFET technology is the key to International

T STG

dv/dt

V GS

E AS

E AR

I DM

I AR

T J

0.85

DS(on)

Parameter

Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

Storage Temperature Range

Lead Temperature

Weight

8.0A

HEXFET

REF:MIL-PRF-19500/596

HEXFET

300 ( 0.063 in.(1.6mm) from case for 10s)

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

MOSFET TECHNOLOGY

JANTXV2N7222

9.3 (Typical)

-55 to 150

500V, N-CHANNEL

JANTX2N7222

12.5

125

±20

700

8.0

5.0

1.0

8.0

3.5

TO-254AA

IRFM440

PD - 90492D

Units

W/°C

V/ns

2/6/02

Related parts for 2N7222

2N7222 Summary of contents

Page 1

... E AR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/ Operating Junction T STG Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page www.irf.com JANTX2N7222 JANTXV2N7222 REF:MIL-PRF-19500/596 500V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY HEXFET Features: n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed ...

Page 2

IRFM440 Electrical Characteristics Parameter BV DSS Drain-to-Source Breakdown Voltage BV DSS / T J Temperature Coefficient of Breakdown Voltage R DS(on) Static Drain-to-Source On-State Resistance V GS(th) Gate Threshold Voltage g fs Forward Transconductance I DSS Zero Gate Voltage Drain ...

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2N7222 International Rectifier Corp., 2N7222 Datasheet

2N7222

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2N7222 Summary of contents

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