2N7522 International Rectifier Corp., 2N7522 Datasheet

2N7522

Manufacturer Part Number

2N7522

Description

Repetitive Avalanche and Dv/dt Rated Mosfet Transistor P-channel

Manufacturer

International Rectifier Corp.

Datasheet

1.2N7522.pdf (1 pages)

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Repetitive Avalanche and dv/dt Rated

MOSFET Transistor P-Channel

200Volt, 0.505

Package: SMD-0.5

Product Summary

Pre-Irradiation

Electrical Characteristics @ T

Thermal Resistance

DSS

GSS

Absolute Maximum Ratings

DS(on)

GS (th)

thJC

@ V

DSS

@ T

Hex Size

Junction-to-Case

= -12V, T

= 25 C

Parameter

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Zero Gate Voltage Drain Current

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

Parameter

= 100 C

= 25 C

, RAD Hard MOSFET

Technology

RAD Hard

Continuous Drain Current

Power Dissipation

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Operating Junction Range

Min

= 25 C (Unless Otherwise Specified)

Parameter

Typ.

-200V

Min

-200

-2.0

DSS

Max

1.67

Typ.

Preliminary Data Sheet

Units

Max

C/W

0.505

-100

-4.0

100

-10

-25

DS (on)

-55 to 150

Value

-8.0

-5.0

-8.0

7.5

Units

Test Conditions

=-12V, I

=0V, I

= -160V, V

=-160V, T

=-20V

=20V

-8.0A

2N7522

Units

01/23/01

, I

=-1.0mA

=-5.0A

=-1.0mA

=-8.0A

=125 C

=0V

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