BC846-BC850 Siemens (acquired by Infineon Technologies Corporation), BC846-BC850 Datasheet - Page 3

• Manufacturer Part Number: BC846-BC850
• Description: NPN Silicon af Transistors ( For af Input Stages And Driver Applications High Current Gain )
• Manufacturer: Siemens (acquired by Infineon Technologies Corporation)

Electrical Characteristics
at T
Parameter
DC characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Collector-emitter breakdown voltage
I
Emitter-base breakdown voltage
I
Collector cutoff current
V
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base-emitter saturation voltage
I
I
Base-emitter voltage
I
I
1)
Semiconductor Group
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t 300 s, D = 2 %.
CB
CB
= 10 mA
= 10 A
= 10 A, V
= 1 A
= 10 A, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
A
= 30 V
= 30 V, T
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
BC 846 A, BC 847 A, BC 848 A
BC 846 B … BC 850 B
BC 847 C, BC 848 C, BC 849 C, BC 850 C
= 25 ˚C, unless otherwise specified.
CE
BE
CE
A
CE
B
B
CE
B
B
= 150 ˚C
= 5 V
= 0.5 mA
= 0.5 mA
= 0
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
BC 846, BC 847
BC 848, BC 849, BC 850
BC 846
BC 847, BC 850
BC 848, BC 849
BC 846
BC 847, BC 850
BC 848, BC 849
BC 846
BC 847, BC 850
BC 848, BC 849
1)
1)
3
Symbol
V
V
V
V
I
h
V
V
V
CB0
FE
(BR)CE0
(BR)CB0
(BR)CES
(BR)EB0
CEsat
BEsat
BE(on)
min.
65
45
30
80
50
30
80
50
30
6
5
–
–
–
–
–
110
200
420
–
–
–
–
580
–
Values
typ.
–
–
–
–
–
–
–
–
–
–
–
–
–
140
250
480
180
290
520
90
200
700
900
660
–
BC 846 ... BC 850
max.
–
–
–
–
–
–
–
–
–
–
–
15
5
–
–
–
220
450
800
250
600
–
–
700
770
Unit
V
nA
–
mV
A