BC636-AP SGS-Thomson (acquired by ST Microelectronics, Inc.), BC636-AP Datasheet - Page 2

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BC636-AP

Manufacturer Part Number
BC636-AP
Description
Manufacturer
SGS-Thomson (acquired by ST Microelectronics, Inc.)
Datasheet
BC636
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
2/5
R
V
R
Pulsed: Pulse duration = 300 s, duty cycle
V
Symbol
V
(BR)CEO
thj-amb
thj-Case
CE(sat)
BE(on)
I
I
h
CBO
EBO
f
FE
T
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
Collector Cut-off
Current (I
Emitter Cut-off Current
(I
Collector-Emitter
Breakdown Voltage
(I
Collector-Emitter
Saturation Voltage
Base-Emitter On
Voltage
DC Current Gain
Transition Frequency
C
B
= 0)
= 0)
Parameter
E
= 0)
2 %
V
V
I
I
I
I
I
I
I
C
C
C
C
C
C
C
CB
EB
= -10 mA
= -500 mA
= -500 mA
= -5 mA
= -150 mA
= -500 mA
= -10 mA V
= -5 V
= -30 V
case
= 25
Test Conditions
o
CE
C unless otherwise specified)
= -5 V f = 50MHz
V
V
V
I
V
B
CE
CE
CE
CE
= -50 mA
= -2 V
= -2 V
= -2 V
= -2 V
Max
Max
Min.
-45
25
40
25
Typ.
83.3
100
125
Max.
-0.1
-0.1
-0.5
250
-1
o
o
Unit
MHz
C/W
C/W
V
V
V
V
A
A

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