MJD2955-001G ON Semiconductor, MJD2955-001G Datasheet - Page 4

• Manufacturer Part Number: MJD2955-001G
• Description: Complementary Power Transistors DPAK For Surface Mount Applications
• Manufacturer: ON Semiconductor

0.05
0.03
0.02
0.01
0.5
0.3
0.1
10
1.6
1.2
0.8
0.4
5
3
2
1
0.07
0.05
0.03
0.02
0.01
0.6
2
0
0.7
0.5
0.3
0.2
0.1
0.1
1
0.01
SINGLE PULSE
0.02
1
D = 0.5
0.05
V
T
0.02
T
J
0.2 0.3
CE
Figure 9. Maximum Forward Bias
Figure 6. “On” Voltages, MJD2955
0.2
0.1
J
= 25°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= 150°C
0.03
2
I
C
, COLLECTOR CURRENT (AMP)
Safe Operating Area
V
V
0.05
V
WIRE BOND LIMIT
THERMAL LIMIT T
SECOND BREAKDOWN LIMIT
BE
CE(sat)
BE(sat)
0.5
0.01
@ V
100 ms
4
CE
@ I
@ I
0.1
= 3 V
C
C
6
/I
/I
1
B
B
1 ms
= 10
= 10
5 ms
0.2
10
C
= 25°C (D = 0.1)
MJD2955 (PNP) MJD3055 (NPN)
2
0.3
3
20
0.5
Figure 8. Thermal Response
5
500 ms
http://onsemi.com
dc
40
1
60
10
2
t, TIME (ms)
4
3
FORWARD BIAS SAFE OPERATING AREA
INFORMATION
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
Figure 8. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
J(pk)
qJC(t)
qJC
There are two limitations on the power handling ability of
The data of Figure 9 is based on T
+11 V
DUTY CYCLE = 1%
0
= 6.25°C/W MAX
− T
5
= r(t) R
t
R
v 150_C. T
r
, t
C
−9 V
B
f
= P
and R
≤ 10 ns
10
Figure 7. Switching Time Test Circuit
qJC
(pk)
1
C
25 ms
q
VARIED TO OBTAIN DESIRED CURRENT LEVELS
JC(t)
20
J(pk)
30
may be calculated from the data in
D
51
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
50
MUST BE FAST RECOVERY TYPE, eg:
R
P
B
(pk)
DUTY CYCLE, D = t
100
−4 V
t
1
J(pk)
t
2
D
200
1
= 150_C; T
+30 V
300
V
B
CC
≈ 100 mA
B
R
1
≈ 100 mA
/t
C
500
2
C
SCOPE
− V
C
1 k
CE
is