NCV3843BV ON Semiconductor, NCV3843BV Datasheet - Page 14

• Manufacturer Part Number: NCV3843BV
• Description: High Performance Current Mode Controllers
• Manufacturer: ON Semiconductor

+
−
5.0V Ref
Comp/Latch
R
S
Q
Figure 28. MOSFET Parasitic Oscillations
Figure 30. Isolated MOSFET Drive
Series gate resistor R
caused by the MOSFET input capacitance and any series wiring inductance in
the gate−source circuit.
+
−
5.0V Ref
7(12)
Comp/Latch
+
−
UC3842B, UC3843B, UC2842B, UC2843B, NCV3843BV
V
CC
7(11)
6(10)
5(8)
3(5)
g
R
S
will damp any high frequency parasitic oscillations
C
Q
Boundary
Isolation
R
R
S
7(12)
+
−
N
V
S
CC
Q1
7(11)
6(10)
5(8)
3(5)
R
g
V
N
+
in
0
−
P
I p k +
50% DC
http://onsemi.com
V (Pin1) * 1.4
Q1
R
V
V
in
S
GS
3 R S
Waveforms
+
0
−
14
N S
N p
25% DC
The MCR101 SCR must be selected for a holding of < 0.5 mA @ T
transistor circuit can be used in place of the SCR as shown. All resistors are 10 k.
+
0
−
The totem pole output can furnish negative base current for enhanced
transistor turn−off, with the addition of capacitor C
MCR
101
Figure 29. Bipolar Transistor Drive
I
B
Figure 31. Latched Shutdown
3905
2N
Base Charge
Removal
3903
8(14)
2N
4(7)
2(3)
1(1)
6(10)
5(8)
3(5)
C1
1
.
EA
R
R
+
Q1
Osc
A(min)
R
V
1.0 mA
Bias
in
S
. The simple two
2R
R
5(9)