EMF9 ROHM Electronics, EMF9 Datasheet
EMF9
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EMF9 Summary of contents
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... Structure Silicon epitaxial planar transistor ! ! ! ! Equivalent circuits (3) (2) (1) Tr1 Tr2 (4) (5) ( Packaging specifications Type EMF9 Package EMT6 Marking F9 Code T2R Basic ordering unit (pieces) 8000 ! ! ! ! External dimensions (Units : mm 1.2 1.6 ROHM : EMT6 Each lead has same dimensions Abbreviated symbol : F9 EMF9 1/5 ...
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... rss − − d(on) − − − − d(off) − − EMF9 Conditions =1mA I C =10µ =10µ =15V =200mA, I =10mA =2V, I =10mA =2V, I =−10mA, f=100MHz V CE ...
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... = 100 1000 COLLECTOR CURRENT : I Fig.3 Collector-emitter saturation voltage vs. collector current ( Ι ) 1000 =20 = Ta=25°C Pulsed 100 10 1 1000 1 10 100 EMITTER CURRENT : I E Fig.6 Gain bandwidth product vs. emitter current EMF9 1000 (mA) C 1000 (mA) 3/5 ...
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... Ta=125°C 10m 75°C 25°C 5m −25° 0.5m 0.2m 0.1m 0.5 0 0.5 1 SOURCE-DRAIN VOLTAGE : V (V) SD Fig.16 Reverse drain current vs. source-drain voltage ( Ι ) EMF9 50 Ta=125°C 20 75°C 25°C 10 −25° 0.5 0.001 0.002 0.005 0.01 0.02 0.05 0.1 DRAIN CURRENT : I (A) D Fig.11 Static drain-source on-state resistance vs. drain current ( Ι ) ...
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... DRAIN-SOURCE VOLTAGE : V (V) DS Fig.18 Typical capacitance vs. drain-source voltage 1000 Ta =25° = 500 = d(off) =10Ω 200 Pulsed 100 d(on 0.1 0.2 0 100 DRAIN CURRENT : I (mA) D Fig.19 Switching characteristics EMF9 5/5 ...