KSC2755 Fairchild Semiconductor, KSC2755 Datasheet - Page 3
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KSC2755
Manufacturer Part Number
KSC2755
Description
NPN Epitaxial Silicon Transistor
Manufacturer
Fairchild Semiconductor
Datasheet
1.KSC2755.pdf
(5 pages)
©2002 Fairchild Semiconductor Corporation
Typical Characteristics
200
150
100
-0.4
-0.8
-1.2
-1.6
-2.0
50
0.0
5
4
3
2
1
0
0
0.00
-0.1
0
yre=g
V
yoe=g
V
CE
CE
25
Figure 7. Power Derating
f=100MHz
=10V
=10V
re
0.25
oe
200MHz
0.0
+ jb
Ta[
+ jb
Figure 11. yoe - f
Figure 9. yre - f
50
I
C
re
o
=3mA
oe
C], AMBIENT TEMPERATURE
g
g
oe
re
[ms], CONDUCTANCE
[ms], CONDUCTANCE
75
5mA
0.50
0.1
10mA
I
C
300MHz
=3mA
100
f=100MHz
0.75
200MHz
0.2
125
10mA
5mA
150
(Continued)
1.00
300MHz
0.3
175
400MHz
400MHz
1.25
200
0.4
-100
-125
-20
-40
-60
60
40
20
-25
-50
-75
20
18
16
14
12
10
25
0
8
6
4
2
0
0
0
-50
0
f=100MHz
I
C
=3mA
yid=g
V
yfe=g
V
CE
CE
200MHz
=10V
=10V
Figure 12. Gpe, NF - I
20
ie
fe
-25
+ jb
+ jb
I
2
C
300MHz
=10mA
Figure 10. yfe - f
I
C
ie
Figure 8. yie - f
fe
[mA], COLLECTOR CURRENT
400MHz
Gpe
NF
g
gfe[ms], CONDUCTANCE
400MHz
ie
300MHz
40
5mA
[ms], CONDUCTANCE
200MHz
0
400MHz
400MHz
4
f=100MHz
300MHz
60
25
f=100MHz
300MHz
6
5mA
80
50
200MHz
C
10mA
3mA
200MHz
400MHz
NF : f=200MHz
Gpe: f=200MHz
200MHz
8
100
75
Rev. A2, September 2002
V
V
CE
CE
100MHz
=10V
=10V
300MHz
100MHz
120
100
10
35
30
25
20
15
10
5
0
-5
-10
-15