2N3700UB Semicoa Semiconductors, 2N3700UB Datasheet - Page 2

• Manufacturer Part Number: 2N3700UB
• Description: Package = Cersot ;; Level = Jans ;; Vceo (V) = 80 ;; Vcbo (V) = 140 ;; Vebo (V) = 7.0 ;; Ic (A) = 1.00 ;; Power (W) ta = 0.5 ;; Rtja ( C/W) = 325 ;; Tstg/top ( C) = -65 to +200 ;; Hfe = 300 ;; VCE(sat) (V) = 0.20
• Manufacturer: Semicoa Semiconductors

Copyright 2002
Rev. G
Off Characteristics
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Emitter-Base Cutoff Current
On Characteristics
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Open Circuit Output Capacitance
Open Circuit Input Capacitance
Collector Base time constant
Noise Figure
Switching Characteristics
Saturated Turn-On Time
Parameter
Parameter
Parameter
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX [phone]
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
Symbol
t
V
ON
V
V
V
r
I
I
I
C
(BR)CEO
I
I
C
h
h
h
h
h
h
|h
CBO1
b
EBO1
EBO2
h
NF
CES1
CES2
CEsat1
CEsat2
BEsat
’C
OBO
FE1
FE2
FE3
FE4
FE5
FE6
+t
IBO
FE
FE
Semicoa Semiconductors, Inc.
OFF
|
C
www.SEMICOA.com
I
V
V
V
V
V
I
I
I
I
I
I
T
I
I
I
V
f = 20 MHz
V
f = 1 kHz
V
100 kHZ < f < 1 MHz
V
100 kHZ < f < 1 MHz
V
f = 79.8 MHz
V
f = 200 Hz, R
C
C
C
C
C
C
C
C
C
C
A
CB
CE
CE
EB
EB
CE
CE
CB
EB
CB
CE
= 30 mA
= 150 mA, V
= 0.1 mA, V
= 10 mA, V
= 500 mA, V
= 1 A, V
= 150 mA, V
= 150 mA, I
= 150 mA, I
= 500 mA, I
= -55°C
= 90 Volts
= 90 Volts, T
= 7 Volts
= 5 Volts
= 10 Volts, I
= 5 Volts, I
= 0.5 Volts, I
= 10 Volts, I
= 140 Volts
= 10 Volts, I
= 10 Volts, I
Test Conditions
Test Conditions
Test Conditions
CE
g
= 10 Volts
CE
B
B
B
CE
= 1 kΩ
CE
CE
CE
C
= 15 mA
= 15 mA
= 50 mA
= 10 Volts
C
E
E
C
= 1 mA,
A
= 10 Volts
C
= 10 Volts
= 10 Volts
= 10 Volts
= 50 mA,
= 0 mA,
= 10 mA,
= 100 µA,
= 0 mA,
= 150°C
Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Min
Min
Min
100
80
50
90
50
15
40
80
5
characteristics specified at T
2N3700UB
Silicon NPN Transistor
Typ
Typ
Typ
Max
Max
Max
300
200
200
400
400
1.1
0.2
0.5
10
10
10
10
10
20
12
60
30
D a t a S h e e t
4
Page 2 of 2
A
Units
Units
Units
Volts
Volts
Volts
= 25°C
µA
nA
µA
µA
nA
dB
pF
pF
ps
ns