MBR20125 Jiangsu Changjiang Electronics Technology Co., Ltd., MBR20125 Datasheet
MBR20125
Manufacturer Part Number
MBR20125
Description
To-220a Plastic-encapsulate Diodes
Manufacturer
Jiangsu Changjiang Electronics Technology Co., Ltd.
Datasheet
1.MBR20125.pdf
(1 pages)
MAXIMUM RATINGS ( T
ELECTRICAL CHARACTERISTICS (T
Symbol
Reverse voltage
Reverse current
Forward voltage
V
MBR20125,150,200
SCHOTTKY BARRIER RECTIFIER
FEATURES
V
V
R
R(RMS)
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss,High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
T
V
P
RWM
RRM
I
T
ΘJA
stg
O
R
D
j
and Polarity Protection Applications
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Power dissipation
Thermal resistance from junction to ambient
Junction temperature
Storage temperature
Parameter
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
a
=25
TO-220A Plastic-Encapsulate Diodes
℃
Symbol
V
V
V
unless otherwise noted )
I
(BR)
F(1)
F(2)
R
a
=25
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
MBR20125
MBR20150
MBR20200
℃
Device
unless otherwise specified)
MBR20125
87.5
125
Test conditions
I
V
V
V
R
I
I
I
=0.1mA
R
R
R
R
F
F
=1mA
=125V
=150V
=200V
=10A
=20A
MBR20150
-55~+150
Value
150
105
125
20
50
2
Min
125
150
200
TO-220A
1. CATHODE
2. ANODE
Typ
MBR20200
200
140
Max
0.87
0.1
0.9
A,Nov,2010
9
1
Unit
mA
℃/W
μA
Unit
V
V
W
℃
℃
V
V
A
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