T15V8M16A TM tech, T15V8M16A Datasheet
T15V8M16A
Related parts for T15V8M16A
T15V8M16A Summary of contents
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... Preliminary T15V8M16A 512K X 16 LOW POWER CMOS STATIC RAM GENERAL DESCRIPTION The T15V8M16A is a very Low Power CMOS Static RAM organized as 524,288 words by 16 bits. That operates on a wide voltage range from 2.7V to 3.6V power supply, Fabricated using high performance CMOS technology, Inputs and ...
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... I/O6 I/O7 A12 A13 WE I/O8 A9 A10 A11 NC SYMBOL DESCRIPTIONS Lower byte (I/O 1~8) LB Upper byte (I/O 9~16) UB VCC Power supply V Ground connection P. 2 Preliminary T15V8M16A I/O16 I/O15 I/O14 I/O13 VSS VCC I/O12 I/O11 I/O10 I/O9 A18 A8 A9 A10 A11 A17 Publication Date: JAN. 2000 ...
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... *Note Don’t Care (Must be low or high state Low High Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V8M16A SYM MIN -55 STG I -40 BIAS I/O 1~8 I/O 9~16 High-Z High-Z ...
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... IH IL, =0mA, IO 0.2V -0.2V CC 0.2V IN =0mA IL 0 Vcc-0. Vcc-0.2V 0.2V or Vcc-0.2V - 0.4 2 Preliminary T15V8M16A MAX UNIT 3.0 3.6 0.0 0.0 - Vcc+0.3 - 0.6 -70 -100 UNIT Min Max Min Max - 0 0.4 - 0.4 2.2 - 2.2 - Publication Date: JAN. 2000 Revision:0 ...
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... Input Rise and Fall Times Input and Output Timing Reference Level Output Load AC TEST LOADS AND WAVEFORM TTL Fig.A * Including Scope and Jig Capacitance Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V8M16A SYMBOL CONDITION ...
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... Write Pulse Width Write Recovery Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V8M16A ( =2.7 to 3.6V -55 -70 SYM ...
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... OLZ (max.) is less than Preliminary T15V8M16A DON'T CARE UNDEFINED (min.) both for a given device LZ This parameter is sampled and not Publication Date: JAN. 2000 Revision:0.A ...
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... Controlled High Hig Controlled Preliminary T15V8M16A INE D Publication Date: JAN. 2000 Revision:0.A ...
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... measured from the end of write to the address change Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V8M16A measured from the beginning of write to the end of write. ...
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... Chip Deselect to Data Retention Time Operation Recovery Time DATA RETENTION WAVEFORM ( Vcc_t CDR Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. Preliminary T15V8M16A SYM. TEST CONDITION -0. Vcc -0.2V or ...
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... P. 11 Preliminary T15V8M16A Publication Date: JAN. 2000 Revision:0.A £c ...
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... Notes : 6.05 1. Bump counts : 48 (8 row x 6column Bump pitch : (x,y)=(0.75 x 0.75) typ. 8.05 3. All tolerance are ±0.050 unless otherwise specified ‘Y’ is coplanarity : 0.08(max) 0.35 5. Units : mm 1.20 - 0.30 0. Preliminary T15V8M16A Units : millimeters Bottom View A1 INDEX MARK 0.30 Publication Date: JAN. 2000 Revision:0.A ...