IRG7PH35U-EP International Rectifier Corp., IRG7PH35U-EP Datasheet - Page 4

• Manufacturer Part Number: IRG7PH35U-EP
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: International Rectifier Corp.

IRG7PH35UPbF/IRG7PH35U-EP
4
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 6- Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
8
7
6
5
4
3
2
1
0
0
5
T
Fig. 10 - Typical V
T
J
J
= 175°C; tp = 30μs
2
= -40°C; tp = 30μs
2
10
T
4
J
4
V CE (V)
V CE (V)
V GE (V)
= 25°C
I CE = 10A
I CE = 20A
I CE = 40A
6
6
CE
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
15
vs. V
8
8
GE
10
10
20
Fig. 7 - Typ. IGBT Output Characteristics
80
70
60
50
40
30
20
10
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
4
0
5
Fig. 11 - Typical V
Fig. 9 - Typical V
T
2
J
8
= 25°C; tp = 30μs
T
T
10
J
J
= -40°C
= 175°C
4
V GE (V)
V CE (V)
V GE (V)
12
I CE = 10A
I CE = 20A
I CE = 40A
CE
I CE = 10A
I CE = 20A
I CE = 40A
CE
6
vs. V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
vs. V
15
16
GE
GE
8
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20
10
20