NTE464(P-Ch) NTE, NTE464(P-Ch) Datasheet - Page 2

• Manufacturer Part Number: NTE464(P-Ch)
• Description: Silicon Complementary MOSFET Transistors Enhancement Mode for Switching Applications
• Manufacturer: NTE

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Electrical Characteristics (Cont’d): (T
Small–Signal Characteristics
Drain–Source Resistance
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Drain–Substrate Capacitance
Switching Characteristics
Turn–On Delay
Rise Time
Turn–Off Delay
Fall Time
NTE465
NTE465
NTE464
NTE464
Parameter
Source
Symbol
C
r
ds(on)
C
|y
C
d(sub)
(4.82)
(12.7)
t
t
.190
.500
d1
t
d2
t
rss
Min
iss
fs
r
f
.018 (0.45) Dia
|
45
A
V
V
V
V
V
I
D
GS
DS
DS
DS
D(SUB)
= +25 C unless otherwise specified)
= –2mA, V
= –10V, I
=
= 0, V
= –10V, I
.040 (1.02)
–
10V, V
= –10V, f = 140kHz
Test Conditions
GS
DS
D
D
= 0, f = 140kHz
GS
= 2mA, f = 1kHz
= 0, f = 1kHz
= –10V, V
= 0, f = 140kHz
Gate
Drain
Case
.220 (5.58) Dia
.185 (4.7) Dia
.030 (.762)
GS
= –10V
1000
Min
–
–
–
–
–
–
–
–
–
–
Typ
–
–
–
–
–
–
–
–
–
–
–
Max
600
300
100
1.3
45
65
60
–
5
4
5
Unit
mhos
pF
pF
pF
pF
ns
ns
ns
ns