PDTC114ET Philips Semiconductors, PDTC114ET Datasheet - Page 3

• Manufacturer Part Number: PDTC114ET
• Description: NPN resistor-equipped transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
1999 Apr 15
V
V
V
V
I
I
P
T
T
T
R
I
I
I
h
V
V
V
R1
R2
------- -
R1
C
O
CM
amb
CBO
CEO
EBO
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
I
tot
CEsat
i(off)
i(on)
th j-a
c
NPN resistor-equipped transistor
= 25 C unless otherwise specified.
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input off voltage
input on voltage
input resistor
resistor ratio
collector capacitance
positive
negative
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
E
B
B
C
C
C
C
C
E
= 0; V
= 0; V
= 0; V
= i
= 0; V
= 5 mA; V
= 10 mA; I
= 100 A; V
= 10 mA; V
open emitter
open base
open collector
T
amb
e
3
= 0; V
CB
CE
CE
EB
CONDITIONS
25 C; note 1
CONDITIONS
= 50 V
= 30 V
= 30 V; T
= 5 V
note 1
CB
CE
B
CE
CE
= 0.5 mA
= 10 V; f = 1 MHz
= 5 V
CONDITIONS
= 0.3 V
= 5 V
j
= 150 C
30
2.5
7
0.8
MIN.
65
65
MIN.
VALUE
500
1.1
1.8
10
1
TYP.
PDTC114ET
Product specification
50
50
10
40
100
100
250
+150
150
+150
10
MAX.
100
1
50
400
150
0.8
13
1.2
2.5
MAX.
UNIT
K/W
V
V
V
V
V
mA
mA
mW
C
C
C
UNIT
nA
mV
V
V
k
pF
UNIT
A
A
A