S-8232 Seiko, S-8232 Datasheet - Page 18

• Manufacturer Part Number: S-8232
• Description: BATTERY PROTECTION IC
• Manufacturer: Seiko

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*1. R4 = R1 is required. Overcharge detection voltage increases by R4. For example 10 kΩ (R4) increases overcharge
*2. The overcharge detection delay time (t
*3. When the resistor R3 is set less than 300 Ω and a charger is reverse-connected, current which exceeds the power
*4. A 4.7 MΩ resistor is needed for R5 to inhibit 0 V battery charging. Current consumption increases when the R5
Caution 1. The above constants may be changed without notice.
18
FET1
FET2
R1
C1
R2
C2
R4
C3
R3
R5
Symbol
BATTERY PROTECTION IC FOR 2-SERIAL-CELL PACK
S-8232 Series
Battery Protection IC Connection Example
detection voltage by 20 mV.
delay time (t
dissipation of the package will flow and the IC may break. But excessive R3 causes increase of overcurrent detection
voltage 1 (V
overcurrent detection voltage 1 (V
resistance is below 4.7 MΩ. R5 should be connected when the product has 0 V battery charging inhibition.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
Nch MOS FET Discharge control
Nch MOS FET Charge control
Chip resistor
Chip capacitor Filter
Chip resistor
Chip capacitor Filter
Chip resistor
Chip capacitor Delay time setting
Chip resistor
Chip resistor
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation.
constant.
Parts
IOV
IOV1
) change with the external capacitor C3. Refer to the “
). V
Battery 1
Battery 2
IOV1
ESD protection
ESD protection
ESD protection
Protection for
charger reverse
connection
0 V battery
charging inhibition
changes to V
Purpose
R1
1 kΩ
R2
1 kΩ
R4
1 kΩ
Table 8 Constants for External Components
C1
C2
IOV1
) from 0.100 V to 0.113 V.
IOV1
CU
0.22 µF
0.22 µF
VSS
SENS
VCC
VC
), the overdischarge detection delay time (t
FET1
= (R3 + R
Perform through evaluation using the actual application to set the
Seiko Instruments Inc.
(4.7 MΩ)
0.22 µF
0.22 µF
0.22 µF
DO
1 kΩ
1 kΩ
1 kΩ
1 kΩ
Typ.


S-8232 Series
VSM
Figure 8
FET2
) / R
CO
= R1 min. = R1 max. Same value as R1 and R2.
VSM
(1 MΩ)
300 Ω
300 Ω
300 Ω
0 µF
0 µF
0 µF
Min.


× V
R5
4.7 MΩ
IOV1
Electrical Characteristics”.
. For example, 50 kΩ resistor (R3) increases
(10 MΩ)
Max.
1 kΩ
1 µF
1 kΩ
1 µF
1 µF
5 kΩ
VM


ICT
R3
1 kΩ
Attention should be paid to leak
current of C3.
Discharge can’t be stopped at less
than 300 Ω when a charger is
reverse-connected.
R5 should be added when the
product has 0 V battery charge
inhibition. Lower resistance
increases current consumption.
CD
Delay time setting
), and the over current detection
0.22 µF
C3
EB+
EB−
Remark
*2






*3
Rev.5.4
*1
_00
*4