MT5C1008LL Austin Semiconductor, MT5C1008LL Datasheet - Page 5

• Manufacturer Part Number: MT5C1008LL
• Description: 128K x 8 SRAM WITH DUAL CHIP ENABLE ULTRA LOW POWER
• Manufacturer: Austin Semiconductor

NOTES:
1. Test conditions assume signal transition time of 3ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified I
2. t
3. At any given temperature and voltage condition, t
4. The internal write time of the memory is defined by the overlap of CE1\ LOW, CE2 HIGH, and WE\ LOW. CE1\ and WE\ must be LOW and CE2 HIGH to initiate a write, and the transition of any of
these signals can terminate the write. The input data setup and hold timing should be referenced to the leading edge of the signal that terminates the write.
5. The minimum write cycle time for Write Cycle No. 3 (WE\ controlled, OE\ LOW) is the sum of t
SWITCHING CHARACTERISTICS
MT5C1008(LL)
Rev. 1.0 7/02
READ CYCLE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE1\ LOW to Data Valid, CE2 HIGH to Data Valid
OE\ LOW to Data Valid
OE\ LOW to Low Z
OE\ HIGH to High Z
CE1\ LOW to Low Z, CE2 HIGH to Low Z
CE1\ HIGH to High Z, CE2 LOW to High Z
WRITE CYCLE
Write Cycle Time
CE1\ LOW to Write End, CE2 HIGH to Write End
Address Set-Up to Write End
Address Hold from Write End
Address Set-Up to Write Start
WE\ Pulse Width
Data Set-up to Write End
Data Hold from Write End
WE\ HIGH to Low Z
WE\ LOW to High Z
HZOE
, t
HZCE
, and t
HZWE
are specified with a load capacitance of 5pF as in part (b) of AC Test Loads. Transition is measured ±500mV from steady-state voltage.
4
Austin Semiconductor, Inc.
PARAMETER
HZCE
< t
LZCE
, t
HZOE
< t
LZOE
, and t
HZWE
1
(-55
< t
LZWE
o
HZWE
5
C < T
for any given device.
and t
t
t
t
t
t
t
SYM
t
HZWE
t
t
t
HZOE
HZCE
t
LZWE
LZOE
LZCE
t
t
PWE
t
OHA
DOE
t
SD
t
ACE
SCE
t
t
t
WC
AW
RC
AA
HA
SA
SD
HD
C
.
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
< 125
o
MIN
C; V
30
30
22
22
22
18
3
0
3
0
0
0
5
-30
CC
Ultra Low Power
= 5.0V +10%)
MAX
30
30
12
15
8
8
MT5C1008(LL)
OL
/I
OH
and 30pF load capacitance.
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
SRAM
SRAM
SRAM
SRAM
SRAM
NOTES
2, 3
2, 3
2, 3
3
5
3