TS128MEP6100 Transcend Information, TS128MEP6100 Datasheet - Page 7

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TS128MEP6100

Manufacturer Part Number
TS128MEP6100
Description
128MB 90PIN PC133 CL3 SDRAM
Manufacturer
Transcend Information
Datasheet
TS128MEP6100
Transcend information Inc.
Note: 1. AC measurement assumes t
System clock cycle time
CK high pulse width
CK low pulse width
Access time from CK
Data-out hold time
CK to Data-out low impedance
CK to Data-out high impedance
Input setup time
CKE setup time for power down exit
Input hold time
Ref/Active to Ref/Active command period
Active to precharge command period
Active command to column command (same bank)
Precharge to active command period
Write recovery or data-in to precharge lead time
Active (a) to Active (b) command period
Transition time (rise and fall)
Refresh period
AC Characteristics
2. Access time is measured at 1.5V. Load condition is C
Parameter
(TA = 0 to 65°C, VDD = 3.3V ± 0.3V, Vss= 0V)
T
= 1ns. Reference level for timing of input signals is 1.5V.
7
T
t
t
T
T
t
t
T
t
T
t
T
t
t
t
t
t
T
CKH
CKL
LZ
HZ
CESP
RC
RCD
RP
DPL
RRD
T
CK
AC
OH
AS,
AH,
RAS
REF (max)
L
(min)
(min)
= 50 pF
t
t
CS,
CH,
(min)
Symbol
t
t
DS,
DH,
t
t
CES
SO-DIMM With 16M X 16 3.3VOLT
128MB 90PIN PC133 CL3 SDRAM
CEH
Value
70.0
45.0
20.0
20.0
15.0
15.0
64.0
7.5
2.5
2.5
5.4
3.0
0.0
3.0
1.5
2.0
0.8
1.0
Unit
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note
1,2
1,2
1,2
1
1
1
1
1
1
1
1
1
1
1
1
1

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