P1303BVG ETC-unknow, P1303BVG Datasheet
P1303BVG
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P1303BVG Summary of contents
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... V GSS 24V DSS V = 20V 5V, V D(ON 4.5V 10V, I DS(ON 15V P1303BVG G : GATE D : DRAIN S : SOURCE SYMBOL LIMITS ± -55 to 150 j stg MAXIMUM 50 LIMITS MIN TYP MAX 30 = 250µ ...
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... Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH “P1303BVG”, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. Effect Transistor DYNAMIC C iss ...
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... N-Channel Enhancement Mode Field NIKO-SEM TYPICAL PERFORMANCE CHARACTERISTICS Effect Transistor 3 P1303BVG SOP-8 Lead Free AUG-13-2004 ...
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... N-Channel Enhancement Mode Field NIKO-SEM Effect Transistor 4 P1303BVG SOP-8 Lead Free AUG-13-2004 ...
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... N-Channel Enhancement Mode Field NIKO-SEM SOIC-8 (D) MECHANICAL DATA Dimension Min. A 4.8 B 3.8 C 5 1.35 G 0.1 Effect Transistor mm Dimension Typ. Max. 4.9 5.0 H 3.9 4.0 I 6.0 6.2 J 0.445 0.51 K 1.27 L 1.55 1.75 M 0.175 0. P1303BVG SOP-8 Lead Free mm Min. Typ. Max. 0.5 0.715 0.83 0.18 0.254 0.25 0.22 0° 4° 8° AUG-13-2004 ...