SST39VF160 Silicon Storage Technology, SST39VF160 Datasheet - Page 5

• Manufacturer Part Number: SST39VF160
• Description: 16 Megabit (1M x 16-Bit) Multi-Purpose Flash
• Manufacturer: Silicon Storage Technology

16 Megabit Multi-Purpose Flash
SST39VF160Q / SST39VF160
Advance Information
T
T
© 1998 Silicon Storage Technology, Inc.
Symbol
A
DQ
CE#
OE#
WE#
V
V
Vss
NC
ABLE
ABLE
Mode
Read
Program
Erase
Standby
Write Inhibit
Write Inhibit
Product Identification
19
DD
DDQ
Hardware Mode
Software Mode
-A
15
-DQ
2: P
0
3: O
0
IN
PERATION
D
ESCRIPTION
Pin Name
Address Inputs
Data Input/output
Chip Enable
Output Enable
Write Enable
Power Supply
I/O Power Supply
Ground
No Connection
M
ODES
S
ELECTION
CE#
V
V
V
V
X
X
V
V
IL
IL
IL
IH
IL
IL
OE#
V
V
V
X
V
X
V
V
IL
IH
IH
IL
IL
IL
Functions
To provide memory addresses. During sector erase A
will select the sector. During block erase A
the block.
To output data during read cycles and receive input data during write
cycles. Data is internally latched during a write cycle. The outputs are in
tri-state when OE# or CE# is high.
To activate the device when CE# is low.
To gate the data output buffers.
To control the write operations.
To provide 3-volt supply (2.7-3.6V)
Supplies power for input/output buffers. It should be either tied to V
(2.7 - 3.6V) for 3V I/O or to a 5.0V (4.5V - 5.5V) power supply to
support 5V I/O. (Not offered on SST39VF160 device, instead it is a NC)
Unconnected pins.
WE#
V
V
V
X
X
V
V
V
IH
IL
IL
IH
IH
IH
A9
A
A
X
X
X
X
V
A
IN
IN
H
IN
5
DQ
D
D
X
High Z
High Z/ D
High Z/ D
Manufacturer Code (00BF)
Device Code (2782)
OUT
IN
OUT
OUT
19
-A
15
address lines will select
Address
A
A
Sector or block address,
XXh for chip erase
X
X
X
A
A
See Table 4
IN
IN
19
19
- A
- A
19
-A
1
1
= V
= V
11
address lines
IL
IL
, A
, A
329 PGM T2.6
0
0
329 PGM T3.2
329-09 11/98
DD
= V
= V
IL
IH
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12