BC559C Philips Semiconductors, BC559C Datasheet - Page 3

• Manufacturer Part Number: BC559C
• Description: PNP general purpose transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Notes
1. V
2. V
1999 May 28
R
I
I
h
V
V
V
C
f
F
j
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BEsat
BE
th j-a
= 25 C unless otherwise specified.
c
PNP general purpose transistor
BEsat
BE
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain; BC559C
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
transition frequency
noise figure; BC559C
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 30 Hz to 15.7 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
C
C
E
E
C
C
= 0; V
= 0; V
= 0; V
= 2 mA; V
= 10 mA; I
= 100 mA; I
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= 10 mA; V
= 200 A; V
= 200 A; V
e
= 0; V
CB
CB
EB
3
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
CE
CE
B
B
CB
CE
B
B
= 10 V; f = 1 MHz
CE
CE
= 0.5 mA
= 0.5 mA; note 1
note 1
= 5 V; see Fig.2
= 5 V; note 2
= 5 mA
= 5 mA; note 1
= 5 V; note 2
= 5 V; f = 100 MHz 100
= 5 V; R
= 5 V; R
CONDITIONS
j
= 150 C
S
S
= 2 k ;
= 2 k ;
420
MIN.
600
VALUE
250
4
TYP.
1
60
180
750
930
650
Product specification
800
4
4
MAX. UNIT
15
4
100
300
650
750
820
BC559
UNIT
K/W
mV
mV
MHz
dB
dB
nA
nA
mV
mV
mV
mV
pF
A