MC74VHC1GT50DFT1 ON Semiconductor, MC74VHC1GT50DFT1 Datasheet - Page 2

• Manufacturer Part Number: MC74VHC1GT50DFT1
• Description: IC BUFF/LVL SHFTR N-INV SOT353
• Manufacturer: ON Semiconductor
• Series: 74VHCr

Specifications of MC74VHC1GT50DFT1

• Logic Type: Buffer/Line Driver, Non-Inverting
• Number Of Elements: 1
• Number Of Bits Per Element: 1
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• Logic Device Type: Buffer, Non Inverting
• Supply Voltage Range: 1.65V To 5.5V
• Logic Case Style: SC-88A
• No. Of Pins: 5
• Operating Temperature Range: -55°C To +125°C
• Rise Time: 20ns
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MC74VHC1GT50OSCT

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD22−A114−A
2. Tested to EIA/JESD22−A115−A
3. Tested to JESD22−C101−A
4. Tested to EIA/JESD78
Device Junction Temperature versus
Time to 0.1% Bond Failures
MAXIMUM RATINGS
RECOMMENDED OPERATING CONDITIONS
Symbol
Symbol
I
Latchup
Temperature °C
V
V
V
I
V
V
t
T
V
I
OUT
I
q
V
P
r
OUT
I
T
T
ESD
OUT
T
OK
CC
stg
CC
IK
JA
CC
, t
IN
IN
D
A
L
J
Junction
f
100
110
120
130
140
80
90
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current, per Pin
DC Supply Current, V
Power dissipation in still air
Thermal resistance
Lead temperature, 1 mm from case for 10 secs
Junction temperature under bias
Storage temperature
ESD Withstand Voltage
Latchup Performance
DC Supply Voltage
DC Input Voltage
DC Output Voltage
Operating Temperature Range
Input Rise and Fall Time
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
CC
and GND
Characteristics
Characteristics
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
Above V
MC74VHC1GT50
http://onsemi.com
CC
and Below GND at 125°C (Note 4)
Charged Device Model (Note 3)
2
Human Body Model (Note 1)
V
Figure 3. Failure Rate vs. Time Junction Temperature
OUT
Machine Model (Note 2)
1
< GND; V
1
V
V
SC−88A, TSOP−5
CC
CC
High or Low State
High or Low State
SC−88A, TSOP−5
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
OUT
V
V
CC
CC
> V
10
= 0
= 0
CC
TIME, YEARS
1.65
Min
−0.5 to V
−55
0.0
0.0
0.0
0
0
−0.5 to +7.0
−0.5 to +7.0
−65 to +150
−0.5 to 7.0
> 2000
Value
> 200
+150
±500
−20
+20
+25
+50
200
333
260
N/A
100
CC
+ 0.5
+125
Max
V
100
5.5
5.5
5.5
20
CC
1000
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V